VS-VSKTF200-08HKP Vishay Semiconductors, VS-VSKTF200-08HKP Datasheet
VS-VSKTF200-08HKP
Specifications of VS-VSKTF200-08HKP
Related parts for VS-VSKTF200-08HKP
VS-VSKTF200-08HKP Summary of contents
Page 1
... DC choppers, electronic welders, induction heating and others where fast switching characteristics are required. CHARACTERISTICS 800/1200 - 40 to 125 /V , MAXIMUM REPETITIVE DRM V BLOCKING VOLTAGE V 800 1200 VSK.F200..P Series Vishay Semiconductors isolating voltage RMS VALUES UNITS 200 A 85 °C 444 7600 A 8000 ...
Page 2
... VSK.F200..P Series Vishay Semiconductors CURRENT CARRYING CAPABILITY FREQUENCY 50 Hz 400 Hz 2500 Hz 5000 Hz 10 000 Hz Recovery voltage V r Voltage before turn- Rise of on-state current dI/dt Case temperature Equivalent values for RC circuit ON-STATE CONDUCTION PARAMETER Maximum average on-state current at case temperature Maximum RMS on-state current ...
Page 3
... A mounting compound is recommended. The torque should be rechecked after a period of 3 hours to allow for the spread of the compound. Use of cable lugs is not recommended, busbar should be used and restrained during tightening. Threads must be lubricated with a compound. DiodesEurope@vishay.com VSK.F200..P Series Vishay Semiconductors VALUES UNITS ...
Page 4
... DC 450 180° 120° 400 90° 350 60° 30° 300 250 RMS Limit 200 Conduction Period 150 VSK.F 200.. S eries 100 Per Junction 125° 100 150 200 250 300 350 Average On-state Current (A) Fig On-State Power Loss Characteristics Document Number: 94422 DiodesEurope@vishay ...
Page 5
... Fig Reverse Recovery Charge Characteristics 6 7 Fig Reverse Recovery Current Characteristics VSK.F200..P Series Vishay Semiconductors 1 S teady S tate Value 0.125 K/ W thJC (DC Operation) 0.1 0.01 VSK.F 200.. S eries Per Junc tion 0.001 0.001 0.01 0 100 S quare Wave Puls e Duration (s) Characteristics thJC 320 I = 1000 A ...
Page 6
... C = 0.47 µ 80 1E1 1E2 1E3 Pulse Basewidth (µ 150 400 1000 2500 5000 S nubber circ uit VSK.F200.. S eries ohms s T rapezoidal pulse C = 0.47 µ 60°C di/ dt 100A/ µ 80 1E1 1E2 1E3 Pulse Basewidth (µs) Document Number: 94422 DiodesEurope@vishay ...
Page 7
... Fast Thyristor/Diode and Thyristor/Thyristor (MAGN-A-PAK Power Modules), 200 A 1E4 2.5 1 0.5 1E3 0.25 0.1 0.05 1E2 VSK.F200.. S eries tp S inusoidal pulse 1E1 1E 1 1E2 Pulse Basewidth (µs) Fig Maximum On-State Energy Power Loss Characteristics 100 Rectangular gate pulse a) Recommended load line for rated di 10V, 10ohms b) Recommended load line for < ...
Page 8
... VSK.F200..P Series Vishay Semiconductors ORDERING INFORMATION TABLE Device code VSK Note • To order the optional hardware go to www.vishay.com/doc?95172 CIRCUIT CONFIGURATION CIRCUIT DESCRIPTION Two SCRs common cathodes SCR/diode common cathodes Two SCRs common anodes www.vishay.com For technical questions within your region, please contact one of the following: 8 DiodesAmericas@vishay ...
Page 9
... SCR/diode doubler circuit, positive control Dimensions Document Number: 94422 For technical questions within your region, please contact one of the following: Revision: 19-Jul-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, CIRCUIT CONFIGURATION CODE LINKS TO RELATED DOCUMENTS www.vishay.com/doc?95086 DiodesEurope@vishay.com VSK.F200..P Series Vishay Semiconductors CIRCUIT DRAWING VSKNF VSKLF ...
Page 10
... Full engineering drawings are available on request • UL identification number for gate and cathode wire: UL 1385 • UL identification number for package V-0 Document Number: 95086 Revision: 03-Aug-07 MAGN-A-PAK 35 (1.38) 80 (3.15) 9 (0.35) 115 (4.53) HEX 13 92 (3.62) For technical questions, contact: indmodules@vishay.com Outline Dimensions Vishay Semiconductors Ø 5.5 28 (1.12) 6 (0.24) www.vishay.com 1 ...
Page 11
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...