VS-VSKD270-08PBF Vishay Semiconductors, VS-VSKD270-08PBF Datasheet - Page 9

• Manufacturer Part Number: VS-VSKD270-08PBF
• Description: SCR Modules 800volt 270amp
• Manufacturer: Vishay Semiconductors

Specifications of VS-VSKD270-08PBF

• Product Category: SCR Modules
• Rohs: yes
• On-state Rms Current (it Rms): 424 A
• Non Repetitive On-state Current: 8920 A
• Breakover Current Ibo Max: 9430 A
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Off-state Leakage Current @ Vdrm Idrm: 50 mA
• On-state Voltage: 1.48 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: Chassis
• Package / Case: MAGN-A-PAK
• Circuit Type: Diodes
• Current Rating: 270 A
• Minimum Operating Temperature: - 40 C

Document Number: 93581
Revision: 02-Jul-10
Fig. 25 - Forward Power Loss Characteristics
400
350
300
250
200
150
100
50
0
0
50
Average F orward Current (A)
R MS Limit
180°
120°
90°
60°
30°
100
[e-mail], [e-mail],
150
1400
1200
1000
700
600
500
400
300
200
100
800
600
400
200
For technical questions within your region, please contact one of the following:
Standard Recovery Diodes, 250 A to 320 A
0
0
0
0
200
Conduction Angle
VSK.320.. S eries
T = 150°C
J
100
250
100
T otal RMS Output Current (A)
(MAGN-A-PAK Power Modules)
T otal Output Current (A)
300
200
200
Fig. 27 - Forward Power Loss Characteristics
Fig. 28 - Forward Power Loss Characteristics
350
300
S ingle Phase Bridge
2 x VSK.320.. S eries
(R ec t)
(S ine)
180°
180°
300
Connec ted
T = 150°C
(S ine)
180°
VSK.320.. S eries
J
Per Junc tion
400
T = 150°C
J
400
500
DC
VSK.250, VSK.270, VSK.320 Series
600
500
0
0
Maximum Allowable Ambient T emperature (°C)
Maximum Allowable Ambient T emperature (°C)
25
25
50
50
[e-mail]
Fig. 26 - Forward Power Loss Characteristics
500
450
400
350
300
250
200
150
100
50
0
75
75
0
RMS Limit
180°
120°
DC
90°
60°
30°
100
100
100
Average Forward Current (A)
125
125
Vishay Semiconductors
200
150
150
300
Conduc tion Period
VSK.320.. S eries
Per Junction
T = 150°C
J
400
500
600
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