VN0606L-P003-G Supertex, VN0606L-P003-G Datasheet

VN0606L-P003-G

Manufacturer Part Number

VN0606L-P003-G

Description

MOSFET 60V 3Ohm

Manufacturer

Supertex

Datasheet

1.VN0606L-P003-G.pdf (3 pages)

Specifications of VN0606L-P003-G

Product Category

MOSFET

Rohs

yes

Transistor Polarity

N-Channel

Drain-source Breakdown Voltage

60 V

Gate-source Breakdown Voltage

+/- 30 V

Continuous Drain Current

0.33 A

Resistance Drain-source Rds (on)

3 Ohms

Configuration

Single

Maximum Operating Temperature

+ 150 C

Mounting Style

Through Hole

Package / Case

TO-92

Minimum Operating Temperature

- 55 C

Power Dissipation

1 W

Factory Pack Quantity

2000

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Features

►

Applications

►

Ordering Information

-G indicates package is RoHS compliant (‘Green’)

Absolute Maximum Ratings

Absolute Maximum Ratings are those values beyond which damage to

the device may occur. Functional operation under these conditions is not

implied. Continuous operation of the device at the absolute rating level may

affect device reliability. All voltages are referenced to device ground.

Parameter

Drain-to-source voltage

Drain-to-gate voltage

Gate-to-source voltage

Operating and storage temperature

Soldering temperature*

Distance of 1.6mm from case for 10 seconds.

Free from secondary breakdown

Low power drive requirement

Ease of paralleling

Low C

Excellent thermal stability

Integral source-drain diode

High input impedance and high gain

Motor controls

Converters

Ampliﬁers

Switches

Power supply circuits

Drivers (relays, hammers, solenoids, lamps,

memories, displays, bipolar transistors, etc.)

VN0606

Device

ISS

and fast switching speeds

Package Options

VN0606L-G

●

N-Channel Enhancement-Mode

Vertical DMOS FET

1235 Bordeaux Drive, Sunnyvale, CA 94089

TO-92

-55

C to +150

300

Value

±30V

DGS

DSS

General Description

This enhancement-mode (normally-off) transistor utilizes a

vertical DMOS structure and Supertex’s well-proven, silicon-

gate manufacturing process. This combination produces a

device with the power handling capabilities of bipolar transistors

and the high input impedance and positive temperature

coefﬁcient inherent in MOS devices. Characteristic of all

MOS structures, this device is free from thermal runaway and

thermally-induced secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a wide

range of switching and amplifying applications where very

low threshold voltage, high breakdown voltage, high input

impedance, low input capacitance, and fast switching speeds

are desired.

Pin Conﬁgurations

Product Marking

Package may or may not include the following marks: Si or

DSS

(V)

/BV

DGS

YYWW

S i V N

●

0 6 0 6 L

Tel: 408-222-8888

SOURCE

YY = Year Sealed

WW = Week Sealed

(max)

TO-92 (L)

DS(ON)

3.0

(Ω)

●

= “Green” Packaging

www.supertex.com

DRAIN

GATE

VN0606

(min)

D(ON)

1.5

(A)

Related parts for VN0606L-P003-G

VN0606L-P003-G Summary of contents

Page 1

... Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Ordering Information Package Options Device VN0606 VN0606L-G -G indicates package is RoHS compliant (‘Green’) Absolute Maximum Ratings Parameter Drain-to-source voltage Drain-to-gate voltage Gate-to-source voltage Operating and storage temperature ...

Page 2

... 25V 1.0MHz - 5 25V 600mA 25Ω GEN - 0V PULSE GENERATOR OUTPUT R GEN D.U.T. INPUT ● Tel: 408-222-8888 ● www.supertex.com VN0606 I I † DR DRM (mA) (A) 330 1 50V = 50V, = 10V DS = 1.0A = 500mA = 470mA ...

Page 3

... Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship ...

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