VP2106N3-P003-G Supertex, VP2106N3-P003-G Datasheet - Page 2

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VP2106N3-P003-G

Manufacturer Part Number
VP2106N3-P003-G
Description
MOSFET 60V 12Ohm
Manufacturer
Supertex
Datasheet

Specifications of VP2106N3-P003-G

Product Category
MOSFET
Rohs
yes
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
- 60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
- 0.25 A
Resistance Drain-source Rds (on)
12 Ohms
Mounting Style
Through Hole
Package / Case
TO-92
Power Dissipation
0.74 W
Factory Pack Quantity
2000
Thermal Characteristics
Notes:
Electrical Characteristics
Switching Waveforms and Test Circuit
Notes:
ΔR
ΔV
R
BV
V
1.
2.
Sym
t
I
C
C
t
C
d(OFF)
I
I
G
V
D(ON)
DS(ON)
d(ON)
GS(th)
GSS
DSS
DS(ON)
t
OSS
RSS
t
I
GS(th)
t
ISS
SD
rr
D
DSS
FS
r
f
(continuous) is limited by max rated T
All D.C. parameters 100% tested at 25
All A.C. parameters sample tested.
Package
TO-92
Drain-to-source breakdown voltage
Gate threshold voltage
Change in V
Gate body leakage
Zero gate voltage drain current
On-state drain current
Static drain-to-source on-state resistance
Change in R
Forward transductance
Input capacitance
Common source output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Diode forward voltage drop
Reverse recovery time
Parameter
OUTPUT
INPUT
-10V
V
0V
0V
DD
GS(th)
DS(ON)
10%
with temperature
with temperature
t
d(ON)
(continuous)
10%
t
(ON)
-250
(mA)
I
t
1235 Bordeaux Drive, Sunnyvale, CA 94089
r
D
j
.
O
90%
(T
C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
A
= 25
O
90%
t
d(OFF)
C unless otherwise specified)
t
90%
(OFF)
(pulsed)
-800
(mA)
I
D
t
F
10%
Power Dissipation
2
Min
-1.5
-0.5
150
-60
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
@T
0.74
A
GENERATOR
(W)
= 25
PULSE
0.55
-1.0
-1.0
200
-1.2
400
Typ
5.8
9.0
3.0
4.0
5.0
5.0
4.0
45
22
11
-
-
-
-
O
C
R
INPUT
GEN
Tel: 408-222-8888
-100
Max
-3.5
-1.0
-2.0
-10
6.5
1.0
8.0
5.0
8.0
9.0
8.0
15
12
60
30
-
-
-
-
(
O
mV/
mmho V
125
Units
%/
C/W)
θ
mA
nA
µA
pF
jc
ns
ns
Ω
V
V
A
V
O
O
C
C V
V
V
V
V
V
V
V
V
V
V
V
V
f = 1.0MHz
V
I
R
V
V
Conditions
www.supertex.com
D
(
GS
GS
GS
GS
GS
DS
GS
GS
GS
GS
GS
DS
GS
DS
DD
GS
GS
O
GEN
170
= -500mA,
C/W)
θ
V
R
ja
= 0.8 Max Rating,
= -25V, I
= -25V,
= 0V, I
= V
= V
= ± 20V, V
= 0V, V
= 0V, T
= -10V, V
= -5.0V, I
= -10V, I
= -10V, I
= 0V,
= -25V,
= 0V, I
= 0V, I
DD
L
= 25Ω
D.U.T.
Output
DS
DS
, I
, I
D
SD
SD
A
D
D
DS
-250
(mA)
= -1.0mA
= -1.0mA
= -1.0mA
D
I
= 125°C
D
D
= -500mA
= -500mA
DR
D
DS
= Max Rating
= -500mA
= -500mA
= -500mA
DS
= -100mA
= -25V
= 0V
VP2106
-800
(mA)
I
DRM

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