VP2106N3-P003-G Supertex, VP2106N3-P003-G Datasheet - Page 4

• Manufacturer Part Number: VP2106N3-P003-G
• Description: MOSFET 60V 12Ohm
• Manufacturer: Supertex

Specifications of VP2106N3-P003-G

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: - 0.25 A
• Resistance Drain-source Rds (on): 12 Ohms
• Mounting Style: Through Hole
• Package / Case: TO-92
• Power Dissipation: 0.74 W
• Factory Pack Quantity: 2000

Typical Performance Curves
-1.1
-1.0
-0.9
100
-1.0
-0.8
-0.6
-0.4
-0.2
75
50
25
0
0
-50
0
0
Capacitance vs. Drain-to-Source Voltage
BV
V
DS
DSS
-2
Transfer Characteristics
-10
= -25V
0
f = 1MHz
Variation with Temperature
V
V
-4
GS
DS
T
(volts)
j
-20
50
(°C)
(volts)
●
-6
1235 Bordeaux Drive, Sunnyvale, CA 94089
100
-30
-8
(cont.)
C
C
RSS
ISS
150
-10
-40
4
1.4
1.2
1.0
0.8
0.6
-10
20
16
12
-8
-6
-4
-2
8
4
0
0
-50
0
0
●
V
(th)
Gate Drive Dynamic Characteristics
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On-Resistance vs. Drain Current
and R
35 pF
-0.2
V
R
0
V
DS
DS(ON)
Q
GS
DS
G
I
= -10V
D
= -5V
Variation with Temperature
(nanocoulombs)
-0.4
(amperes)
@ -10V, 0.5A
T
j
101 pF
1.0
50
(°C)
V
●
-0.6
DS
www.supertex.com
V
=
(th)
-40V
@ 1mA
100
V
GS
-0.8
= -10V
-1.0
150
2.0
2.0
1.6
1.2
0.8
0.4
0
VP2106