VS-VSKH26/08 Vishay Semiconductors, VS-VSKH26/08 Datasheet - Page 2

• Manufacturer Part Number: VS-VSKH26/08
• Description: SCR Modules 800 Volt 27 Amp 420 Amp IFSM
• Manufacturer: Vishay Semiconductors

Specifications of VS-VSKH26/08

• Product Category: SCR Modules
• Rohs: yes
• On-state Rms Current (it Rms): 60 A
• Non Repetitive On-state Current: 400 A
• Breakover Current Ibo Max: 420 A
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Off-state Leakage Current @ Vdrm Idrm: 15 mA
• On-state Voltage: 1.65 V
• Holding Current (ih Max): 200 mA
• Gate Trigger Voltage (vgt): 2.5 V
• Gate Trigger Current (igt): 150 mA
• Maximum Operating Temperature: + 125 C
• Mounting Style: Chassis
• Package / Case: ADD-A-PAK
• Circuit Type: Thyristors / Diodes
• Current Rating: 27 A
• Minimum Operating Temperature: - 40 C
• Factory Pack Quantity: 10

VSKT26.., VSKH26.., VSKL26.., VSKN26.. Series
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
Notes
(1)
(2)
(3)
(4)
www.vishay.com
2
VOLTAGE RATINGS
TYPE NUMBER
VSK.26
ON-STATE CONDUCTION
PARAMETER
Maximum average on-state current (thyristors)
Maximum average forward current (diodes)
Maximum continuous RMS on-state current,
as AC switch
Maximum peak, one-cycle non-repetitive
on-state or forward current
Maximum I
Maximum I
Maximum value or threshold voltage
Maximum value of on-state
slope resistance
Maximum peak on-state or forward voltage
Maximum non-repetitive rate of rise of
turned on current
Maximum holding current
Maximum latching current
I
Average power = V
16.7 % x π x I
I > π x I
2
t for time t
AV
2
2
t for fusing
√t for fusing
x
= I
AV
2
< I < π x I
√t x √t
VOLTAGE
T(TO)
CODE
04
06
08
10
12
14
16
x
x I
AV
[e-mail], [e-mail],
T(AV)
For technical questions within your region, please contact one of the following:
+ r
REVERSE VOLTAGE
t
REPETITIVE PEAK
x (I
V
RRM
T(RMS)
, MAXIMUM
Thyristor/Diode and Thyristor/Thyristor, 27 A
1000
1200
1400
1600
ADD-A-PAK Generation VII Power Modules
400
600
800
)
V
2
SYMBOL
V
I
I
O(RMS)
T(TO)
2
dI/dt
I
I
I
I
r
V
V
T(AV)
F(AV)
TSM
FSM
√t
or
I
t
I
I
2
TM
FM
H
L
(2)
t
(1)
(2)
180° conduction, half sine wave,
T
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 0.1 ms to 10 ms, no voltage reapplied
T
Low level
High level
Low level
High level
I
I
T
I
T
resistive load, gate open circuit
T
TM
FM
TM
NON-REPETITIVE PEAK
C
J
J
J
J
= T
= 25 °C, from 0.67 V
= 25 °C, anode supply = 6 V,
= 25 °C, anode supply = 6 V, resistive load
REVERSE VOLTAGE
= 85 °C
= π x I
= π x I
= π x I
V
RSM
J
maximum
T(AV)
F(AV)
T(AV)
, MAXIMUM
(3)
(3)
(4)
(4)
1100
1300
1500
1700
500
700
900
V
, I
g
TEST CONDITIONS
No voltage
reapplied
100 % V
reapplied
No voltage
reapplied
100 % V
reapplied
T
T
T
= 500 mA, t
J
J
J
I
(RMS)
= T
= T
= 25 °C
J
J
[e-mail]
DRM
or
maximum
maximum
RRM
RRM
,
r
< 0.5 μs, t
V
PEAK OFF-STATE VOLTAGE,
Sinusoidal
half wave,
initial T
Initial T
DRM
GATE OPEN CIRCUIT
, MAXIMUM REPETITIVE
J
J
p
= T
= T
I
(RMS)
> 6 μs
J
J
1000
1200
1400
1600
maximum
maximum
400
600
800
V
Document Number: 94629
VALUES
Revision: 17-May-10
8000
0.86
1.09
9.58
7.31
1.65
400
420
335
350
800
730
560
510
150
200
400
27
60
AT 125 °C
I
RRM,
UNITS
mA
A
15
A/μs
mΩ
A
mA
2
A
V
V
I
2
√s
DRM
s