VS-VSKH26/08 Vishay Semiconductors, VS-VSKH26/08 Datasheet - Page 6

• Manufacturer Part Number: VS-VSKH26/08
• Description: SCR Modules 800 Volt 27 Amp 420 Amp IFSM
• Manufacturer: Vishay Semiconductors

Specifications of VS-VSKH26/08

• Product Category: SCR Modules
• Rohs: yes
• On-state Rms Current (it Rms): 60 A
• Non Repetitive On-state Current: 400 A
• Breakover Current Ibo Max: 420 A
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Off-state Leakage Current @ Vdrm Idrm: 15 mA
• On-state Voltage: 1.65 V
• Holding Current (ih Max): 200 mA
• Gate Trigger Voltage (vgt): 2.5 V
• Gate Trigger Current (igt): 150 mA
• Maximum Operating Temperature: + 125 C
• Mounting Style: Chassis
• Package / Case: ADD-A-PAK
• Circuit Type: Thyristors / Diodes
• Current Rating: 27 A
• Minimum Operating Temperature: - 40 C
• Factory Pack Quantity: 10

VSKT26.., VSKH26.., VSKL26.., VSKN26.. Series
Vishay Semiconductors
www.vishay.com
6
0.01
0.1
10
[e-mail], [e-mail],
100
0.1
1
10
0.001
0.001
1
For technical questions within your region, please contact one of the following:
Rectangular g ate pulse
b)Recommended load line for
a)Recommended load line for
<= 30% rated di/dt: 20 V, 65 ohms
tr = 1 µs , tp >= 6 µs
rated di/ dt: 20 V, 30 ohms
tr = 0.5 µs, tp >= 6 µs
RthJC = 0.76 °C/W
(DC operation)
VGD
Steady state value
IGD
0.01
1000
Thyristor/Diode and Thyristor/Thyristor, 27 A
ADD-A-PAK Generation VII Power Modules
100
Fig. 11 - Thermal Impedance Z
10
Fig. 10 - On-State Voltage Drop Characteristics
1
0.0
0.01
Instantaneous on-state voltage (V)
1.0
Fig. 12 - Gate Characteristics
Per leg
Square wave pulse duration (s)
0.1
Instantaneous gate current (A)
IR K.26.. S eries
(b)
VSK.
2.0
(a)
Tj = 25°C
Tj = 125°C
3.0
0.1
Per leg
1
4.0
thJC
Frequency Limited by PG(AV)
Characteristics
5.0
(1) PGM = 100 W, tp = 500 µs
(2) PGM = 50 W, tp = 1 ms
(3) PGM = 20 W, tp = 25 ms
(4) PGM = 10 W, tp = 5 ms
10
(4) (3)
[e-mail]
6.0
1
(2) (1)
100
1000
10
Document Number: 94629
Revision: 17-May-10