VS-VSKT250-08PBF Vishay Semiconductors, VS-VSKT250-08PBF Datasheet - Page 3

• Manufacturer Part Number: VS-VSKT250-08PBF
• Description: SCR Modules 250 Amp 800 Volt 550 Amp IT(RMS)
• Manufacturer: Vishay Semiconductors

Specifications of VS-VSKT250-08PBF

• Product Category: SCR Modules
• Rohs: yes
• On-state Rms Current (it Rms): 555 A
• Non Repetitive On-state Current: 8500 A
• Breakover Current Ibo Max: 8900 A
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Off-state Leakage Current @ Vdrm Idrm: 50 mA
• On-state Voltage: 1.44 V
• Holding Current (ih Max): 500 mA
• Gate Trigger Voltage (vgt): 3 V
• Gate Trigger Current (igt): 200 mA
• Maximum Operating Temperature: + 130 C
• Mounting Style: Chassis
• Package / Case: MAGN-A-PAK
• Circuit Type: SCR / SCR
• Current Rating: 250 A
• Minimum Operating Temperature: - 40 C

Document Number: 94417
Revision: 02-Jul-10
SWITCHING
PARAMETER
Typical delay time
Typical rise time
Typical turn-off time
BLOCKING
PARAMETER
Maximum peak reverse and
off-state leakage current
RMS insulation voltage
Critical rate of rise of off-state voltage
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
Maximum peak negative gate voltage
Maximum required DC gate voltage to trigger
Maximum required DC gate current to trigger
Maximum gate voltage that will not trigger
Maximum gate current that willnot trigger
Maximum rate of rise of turned-on current
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Junction operating and storage
temperature range
Maximum thermal resistance,
junction to case per junction
Typical thermal resistance,
case to heatsink per module
Mounting torque ± 10 %
Approximate weight
Case style
[e-mail], [e-mail],
MAP to heatsink
(MAGN-A-PAK Power Modules), 170 A/250 A
For technical questions within your region, please contact one of the following:
busbar to MAP
SYMBOL
SYMBOL
SCR/SCR and SCR/Diode
dV/dt
I
I
V
RRM,
DRM
t
t
t
INS
d
q
r
SYMBOL
SYMBOL
T
P
R
+ I
R
- V
J
dI/dt
P
V
V
I
, T
G(AV)
I
thJC
thCS
GT
GD
GM
GD
GT
GM
GT
Stg
T
V
I
V
T
50 Hz, circuit to base, all terminals shorted, 25 °C, 1 s
T
TM
J
J
J
d
R
= 25 °C, gate current = 1 A dI
= T
= T
= 0.67 % V
= 50 V; dV/dt = 20 V/μs; gate 0 V, 100 
= 300 A; dI/dt = 15 A/μs; T
DC operation
Mounting surface flat, smooth and greased
A mounting compound is recommended
and the torque should be rechecked after
a period of about 3 hours to allow for the
spread of the compound.
J
J
t
f = 50 Hz, T
t
t
T
T
T
T
T
T
T
T
T
rated V
p
p
p
maximum
J
J
J
J
J
J
J
J
J
maximum, exponential to 67 % rated V
 5 ms, T
 5 ms, T
 5 ms, T
= - 40 °C
= 25 °C
= T
= - 40 °C
= 25 °C
= T
= T
= T
= T
J
J
J
J
J
DRM
maximum, rated V
maximum, rated V
maximum, I
maximum
maximum
DRM
TEST CONDITIONS
TEST CONDITIONS
VSK.170PbF, VSK.250PbF Series
TEST CONDITIONS
TEST CONDITIONS
J
J
J
J
applied
= T
= T
= T
= T
J
J
J
J
maximum
maximum
maximum
maximum
TM
Anode supply = 12 V,
resistive load; Ra = 1 
Anode supply = 12 V,
resistive load; Ra = 1 
= 400 A,
[e-mail]
J
= T
DRM
DRM
g
/dt = 1 A/μs
J
maximum;
applied
applied
Vishay Semiconductors
DRM
VSK.170
VSK.170
0.17
0.02
VSK.170
VSK.170
- 40 to 130
50
4 to 6
50 to 150
10.0
0.25
10.0
17.8
350
200
100
500
500
4.0
3.0
2.0
2.0
3.0
5.0
MAGN-A-PAK
3000
1000
1.0
2.0
VSK.250
VSK.250
0.125
0.02
VSK.250
VSK.250
www.vishay.com
60
UNITS
UNITS
UNITS
UNITS
A/μs
K/W
Nm
mA
mA
oz.
°C
V/μs
W
mA
A
V
V
g
μs
V
3