VS-ST330S04P0PBF Vishay Semiconductors, VS-ST330S04P0PBF Datasheet - Page 2

• Manufacturer Part Number: VS-ST330S04P0PBF
• Description: SCRs 330 Amp 400 Volt 520 Amp IT(RMS)
• Manufacturer: Vishay Semiconductors

Specifications of VS-ST330S04P0PBF

• Product Category: SCRs
• Rohs: yes
• Breakover Current Ibo Max: 9420 A
• Rated Repetitive Off-state Voltage Vdrm: 400 V
• Off-state Leakage Current @ Vdrm Idrm: 50 mA
• Forward Voltage Drop: 1.52 V
• Gate Trigger Voltage (vgt): 3 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 200 mA
• Holding Current (ih Max): 600 mA
• Mounting Style: Stud
• Package / Case: TO-118
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Factory Pack Quantity: 6

ST330SPbF Series
Vishay High Power Products
www.vishay.com
2
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average on-state current
at case temperature
Maximum RMS on-state current
Maximum peak, one-cycle
non-repetitive surge current
Maximum I
Maximum I
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum on-state voltage
Maximum holding current
Typical latching current
SWITCHING
PARAMETER
Maximum non-repetitive rate of rise
of turned-on current
Typical delay time
Typical turn-off time
BLOCKING
PARAMETER
Maximum critical rate of rise of
off-state voltage
Maximum peak reverse and
off-state leakage current
2
2
t for fusing
√t for fusing
For technical questions, contact: [e-mail]
SYMBOL
SYMBOL
SYMBOL
V
V
I
T(RMS)
dV/dt
I
I
dI/dt
I
I
T(TO)1
T(TO)2
V
RRM,
T(AV)
I
DRM
TSM
Phase Control Thyristors
I
2
r
r
t
t
I
I
2
TM
t1
t2
H
d
q
√t
L
t
(Stud Version), 330 A
Gate drive 20 V, 20 Ω, t
T
Gate current A, dI
V
I
V
T
T
180° conduction, half sine wave
DC at 75 °C case temperature
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x π x I
(I > π x I
(16.7 % x π x I
(I > π x I
I
T
TM
pk
J
J
d
R
J
J
= T
= 0.67 % V
= T
= T
= 25 °C, anode supply 12 V resistive load
= 1000 A, T
= 50 V, dV/dt = 20 V/µs, gate 0 V 100 Ω, t
= 550 A, T
J
J
J
maximum linear to 80 % rated V
maximum, anode voltage ≤ 80 % V
maximum, rated V
T(AV)
T(AV)
), T
), T
DRM
J
No voltage
reapplied
100 % V
reapplied
No voltage
reapplied
100 % V
reapplied
T(AV)
T(AV)
J
= T
J
J
= T
TEST CONDITIONS
TEST CONDITIONS
TEST CONDITIONS
= T
= T
g
, T
/dt = 1 A/µs
J
< I < π x I
< I < π x I
J
J
maximum, dI/dt = 40 A/µs,
J
J
maximum, t
= 25 °C
maximum
maximum
RRM
RRM
r
≤ 1 µs
DRM
T(AV)
T(AV)
Sinusoidal half wave,
initial T
/V
RRM
p
), T
), T
= 10 ms sine pulse
applied
J
J
J
= T
= T
= T
DRM
J
J
J
DRM
maximum
maximum
maximum
p
= 500 µs
Document Number: 94409
VALUES
VALUES
VALUES
Revision: 11-Aug-08
0.834
0.898
0.687
0.636
1000
9000
9420
7570
7920
4050
1000
1.52
500
330
520
405
370
287
262
600
100
1.0
50
75
UNITS
UNITS
UNITS
kA
kA
A/µs
V/µs
mA
mΩ
mA
µs
°C
A
A
V
V
2
2
√s
s