VS-VSKH162/16PBF Vishay Semiconductors, VS-VSKH162/16PBF Datasheet - Page 2

• Manufacturer Part Number: VS-VSKH162/16PBF
• Description: SCR Modules 1600 Volt 160 Amp
• Manufacturer: Vishay Semiconductors

Specifications of VS-VSKH162/16PBF

• Product Category: SCR Modules
• Rohs: yes
• On-state Rms Current (it Rms): 355 A
• Non Repetitive On-state Current: 4870 A
• Breakover Current Ibo Max: 5100 A
• Rated Repetitive Off-state Voltage Vdrm: 1.6 kV
• Off-state Leakage Current @ Vdrm Idrm: 50 mA
• On-state Voltage: 1.54 V
• Holding Current (ih Max): 200 mA
• Gate Trigger Voltage (vgt): 2.5 V
• Gate Trigger Current (igt): 150 mA
• Maximum Operating Temperature: + 130 C
• Mounting Style: Chassis
• Package / Case: INT-A-PAK
• Circuit Type: Thyristors / Diodes
• Current Rating: 160 A
• Minimum Operating Temperature: - 40 C
• Factory Pack Quantity: 15

VSK.136..PbF, VSK.142..PbF, VSK.162..PbF Series
Vishay High Power Products
www.vishay.com
2
FORWARD CONDUCTION
PARAMETER
Maximum average on-state current
at case temperature
Maximum RMS on-state current
Maximum peak, one-cycle
on-state, non-repetitive
surge current
Maximum I
Maximum I
Low level value of threshold voltage
High level value of threshold voltage
Low level value on-state
slope resistance
High level value on-state
slope resistance
Maximum on-state voltage drop
Maximum forward voltage drop
Maximum holding current
Maximum latching current
SWITCHING
PARAMETER
Typical delay time
Typical rise time
Typical turn-off time
BLOCKING
PARAMETER
Maximum peak reverse and
off-state leakage current
RMS insulation voltage
Critical rate of rise of
off-state voltage
2
2
t for fusing
√t for fusing
SYMBOL
SYMBOL
SYMBOL
I
V
V
dV/dt
I
T(RMS)
For technical questions, contact:
I
I
V
I
V
V
RRM
T(TO)1
T(TO)2
T(AV)
I
DRM
TSM
t
I
2
r
r
t
I
I
t
INS
gd
2
TM
FM
gr
t1
t2
H
√t
L
q
t
,
T
50 Hz, circuit to base,
all terminals shorted, t = 1 s
T
exponential to 67 % rated V
180° conduction, half sine wave
As AC switch
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 0.1 ms to 10 ms, no voltage reapplied
(16.7 % x π x I
(I > π x I
(16.7 % x π x I
(I > π x I
I
I
Anode supply = 6 V initial I
Anode supply = 6 V resistive load = 1 Ω
Gate pulse: 10 V, 100 μs, T
T
I
V
Thyristor/Thyristor, 135 A to 160 A
TM
TM
TM
(New INT-A-PAK Power Modules)
J
J
J
R
= 25 °C
= 125 °C
= T
= 50 V; dV/dt = 20 V/μs; gate 0 V, 100 Ω
= π x I
= π x I
= 300 A, - dl/dt = 15 A/μs; T
J
maximum,
T(AV)
T(AV)
T(AV)
T(AV)
Thyristor/Diode and
), T
), T
TEST CONDITIONS
TEST CONDITIONS
TEST CONDITIONS
No voltage
reapplied
100 % V
reapplied
No voltage
reapplied
100 % V
reapplied
Gate current = 1 A, dl
V
, T
, T
T(AV)
T(AV)
d
J
J
J
J
= 0.67 % V
maximum
maximum
= 25 °C, 180° conduction
= 25 °C, 180° conduction
< I < π x I
< I < π x I
RRM
RRM
[e-mail]
T
J
DRM
Sine half wave,
initial T
T
DRM
= 30 A, T
T(AV)
T(AV)
= 25 °C
J
maximum
J
), T
), T
= T
g
J
J
J
/dt = 1 A/μs
J
=
maximum
maximum
maximum
J
= 25 °C
VSK.136 VSK.142 VSK.162
515.5
3200
3360
2700
2800
51.5
36.5
33.3
0.86
1.05
2.02
1.65
1.57
1.57
135
300
85
47
50 to 200
VALUES
VALUES
4500
4712
3785
3963
1013
3500
1000
92.5
71.6
65.4
0.83
1.78
1.43
1.55
1.55
140
310
102
200
400
85
50
1
1
2
Document Number: 94513
Revision: 04-May-10
4870
5100
4100
4300
1190
76.7
0.98
1.67
1.38
1.54
1.54
160
355
119
108
0.8
85
84
UNITS
UNITS
UNITS
kA
kA
V/μs
mΩ
mA
mA
°C
μs
A
A
V
V
V
V
2
2
√s
s