VS-ST183C08CFN0 Vishay Semiconductors, VS-ST183C08CFN0 Datasheet - Page 2

• Manufacturer Part Number: VS-ST183C08CFN0
• Description: SCR Modules 800 Volt 370 Amp
• Manufacturer: Vishay Semiconductors

Specifications of VS-ST183C08CFN0

• Product Category: SCR Modules
• Rohs: yes
• On-state Rms Current (it Rms): 690 A
• Non Repetitive On-state Current: 4900 A
• Breakover Current Ibo Max: 5130 A
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Off-state Leakage Current @ Vdrm Idrm: 40 mA
• On-state Voltage: 1.8 V
• Holding Current (ih Max): 600 mA
• Gate Trigger Voltage (vgt): 3 V
• Gate Trigger Current (igt): 150 mA
• Maximum Operating Temperature: + 125 C
• Mounting Style: Chassis
• Package / Case: TO-200AB (A-PUK)
• Circuit Type: SCR
• Current Rating: 370 A
• Minimum Operating Temperature: - 40 C
• Factory Pack Quantity: 12

ST183CPbF Series
Vishay High Power Products
www.vishay.com
2
CURRENT CARRYING CAPABILITY
FREQUENCY
50 Hz
400 Hz
1000 Hz
2500 Hz
Recovery voltage V
Voltage before turn-on V
Rise of on-state current dI/dt
Heatsink temperature
Equivalent values for RC circuit
ON-STATE CONDUCTION
PARAMETER
Maximum average on-state current
at heatsink temperature
Maximum RMS on-state current
Maximum peak, one half cycle,
non-repetitive surge current
Maximum I
Maximum I
Maximum peak on-state voltage
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward slope resistance
High level value of forward slope resistance
Maximum holding current
Typical latching current
2
2
t for fusing
√t for fusing
r
d
For technical questions, contact: [e-mail]
770
730
600
350
40
SYMBOL
180° el
V
V
I
I
T(RMS)
(Hockey PUK Version), 370 A
I
T(AV)
V
T(TO)1
T(TO)2
I
TSM
47/0.22
I
2
r
r
I
I
2
TM
t1
t2
H
L
V
√t
t
Inverter Grade Thyristors
50
DRM
50
660
600
490
270
55
I
TM
180° conduction, half sine wave
double side (single side) cooled
DC at 25 °C heatsink temperature double side cooled
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 0.1 to 10 ms, no voltage reapplied
I
t
(16.7 % x π x I
(I > π x I
(16.7 % x π x I
(I > π x I
T
T
TM
p
J
J
= 10 ms sine wave pulse
= 25 °C, I
= 25 °C, V
= 600 A, T
T(AV)
T(AV)
1220
1270
1210
T
), T
), T
860
A
40
> 30 A
No voltage
reapplied
100 % V
reapplied
No voltage
reapplied
100 % V
reapplied
J
T(AV)
T(AV)
= 12 V, R
= T
J
J
180° el
TEST CONDITIONS
= T
= T
47/0.22
J
V
< I < π x I
< I < π x I
maximum,
50
DRM
J
J
-
maximum
maximum
RRM
RRM
a
= 6 Ω, I
1160
1090
1040
730
I
55
TM
T(AV)
T(AV)
Sinusoidal half wave,
initial T
), T
), T
G
= 1 A
J
J
J
= T
= T
= T
5450
2760
1600
J
J
J
800
40
maximum
maximum
maximum
100 µs
47/0.22
V
50
DRM
-
Document Number: 94368
4960
2420
1370
680
I
55
TM
370 (130)
VALUES
55 (85)
Revision: 30-Apr-08
4900
5130
4120
4310
1200
1000
1.80
1.40
1.45
0.67
0.58
690
120
110
600
85
78
UNITS
Ω/µF
A/µs
°C
UNITS
A
V
kA
kA
mΩ
mA
°C
A
A
V
2
2
√s
s