NE3210S01-T1B-A NEC/CEL, NE3210S01-T1B-A Datasheet

no-image

NE3210S01-T1B-A

Manufacturer Part Number
NE3210S01-T1B-A
Description
MOSFET Super Lo Noise HJFET
Manufacturer
NEC/CEL
Datasheet
1.NE3210S01-T1B-A.pdf (5 pages)

Specifications of NE3210S01-T1B-A

Rohs
yes
Drain-source Breakdown Voltage
4 V
Gate-source Breakdown Voltage
- 3 V
Continuous Drain Current
10 mA
Mounting Style
SMD/SMT
Package / Case
SO-1
Power Dissipation
165 mW
Factory Pack Quantity
4000
DESCRIPTION
The NE325S01 is a Hetero-Junction FET that uses the junction
between Si-doped AlGaAs and undoped InGaAs to create very
high mobility electrons. Its excellent low noise figure and high
associated gain make it suitable for commercial systems and
industrial applications.
NEC's stringent quality assurance and test procedures assure
the highest reliability and performance.
Note:
1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually
FEATURES
• SUPER LOW NOISE FIGURE:
• HIGH ASSOCIATED GAIN:
• GATE LENGTH: ≤ 0.20 µm
• GATE WIDTH: 200 µm
• LOW COST PLASTIC PACKAGE
ELECTRICAL CHARACTERISTICS
SYMBOLS
0.45 dB TYP at 12 GHz
12.5 dB TYP at 12 GHz
measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production line
as a "go-no-go" screening tuned for the "generic" type but not each specimen.
V
I
I
NF
G
GS(off)
GSO
DSS
g
A 1
m
1
NOISE AMPLIFIER N-CHANNEL HJ-FET
Noise Figure, V
Associated Gain, V
Saturated Drain Current, V
Transconductance, V
Gate to Source Cutoff Voltage, V
Gate to Source Leak Current, V
PARAMETERS AND CONDITIONS
DS
= 2 V, I
DS
DS
PACKAGE OUTLINE
= 2 V, I
PART NUMBER
= 2 V, I
D
DS
= 10 mA, f = 12 GHz
C to KU BAND SUPER LOW
D
= 2 V, V
= 10 mA, f = 12 GHz
D
GS
DS
= 10 mA
= -3 V
= 2 V,I
GS
(T
A
= 0 V
D
= 25°C)
= 100 µA
RECOMMENDED
OPERATING CONDITIONS
SYMBOLS
V
P
I
DS
D
in
UNITS
1.0
0.5
mA
mS
dB
dB
µA
V
0
1
California Eastern Laboratories
CHARACTERISTICS
Drain to Source Voltage
Drain Current
Input Power
NOISE FIGURE & ASSOCIATED
GAIN vs. FREQUENCY
2
Ga
Frequency, f (GHz)
11.0
MIN
-0.2
NF
20
45
4
NE325S01
6
NE325S01
S01
8 10
TYP
0.45
12.5
-0.7
UNITS MIN TYP MAX
0.5
60
60
(T
dBm
V
I
mA
D
A
V
DS
14
= 10 mA
= 25°C)
= 2 V
20
30
24
20
16
12
8
4
10
MAX
0.55
-2.0
2
90
10
20
3
0

Related parts for NE3210S01-T1B-A

Image
Part Number
Description
Manufacturer
Datasheet
Request R
NE434S01-T1B
Part Number:
NE434S01-T1B
Description:
MOSFET S01 LO NO HJ FET S01 LO NO HJ FET
Manufacturer:
NEC/CEL
Datasheet:
NE434S01-T1B.pdf (10 pages)
NE25139-T1-U72
Part Number:
NE25139-T1-U72
Description:
MOSFET REORD 551-NE25139 SOT-143 DL GT MOSFET
Manufacturer:
NEC/CEL
Datasheet:
NE25139-T1-U72.pdf (6 pages)
NE34018-T1-64
Part Number:
NE34018-T1-64
Description:
MOSFET L-S Band Lo No Amp
Manufacturer:
NEC/CEL
Datasheet:
NE34018-T1-64.pdf (8 pages)
NE429M01-T1
Part Number:
NE429M01-T1
Description:
MOSFET Super Lo Noise HJFET
Manufacturer:
NEC/CEL
Datasheet:
NE434S01-T1B.pdf (10 pages)
NE34018-64
Part Number:
NE34018-64
Description:
MOSFET L-S Band Lo No Amp
Manufacturer:
NEC/CEL
Datasheet:
NE34018-64.pdf (8 pages)
NE434S01-T1B
Part Number:
NE434S01-T1B
Description:
MOSFET S01 LO NO HJ FET S01 LO NO HJ FET
Manufacturer:
NEC/CEL
Datasheet:
NE434S01-T1B.pdf (10 pages)
NE25139-T1-U72
Part Number:
NE25139-T1-U72
Description:
MOSFET REORD 551-NE25139 SOT-143 DL GT MOSFET
Manufacturer:
NEC/CEL
Datasheet:
NE25139-T1-U72.pdf (6 pages)
NE34018-T1-64
Part Number:
NE34018-T1-64
Description:
MOSFET L-S Band Lo No Amp
Manufacturer:
NEC/CEL
Datasheet:
NE34018-T1-64.pdf (8 pages)
NE429M01-T1
Part Number:
NE429M01-T1
Description:
MOSFET Super Lo Noise HJFET
Manufacturer:
NEC/CEL
Datasheet:
NE434S01-T1B.pdf (10 pages)
NE34018-64
Part Number:
NE34018-64
Description:
MOSFET L-S Band Lo No Amp
Manufacturer:
NEC/CEL
Datasheet:
NE34018-64.pdf (8 pages)

NE3210S01-T1B-A Summary of contents

Page 1

NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • SUPER LOW NOISE FIGURE: 0.45 dB TYP at 12 GHz • HIGH ASSOCIATED GAIN: 12.5 dB TYP at 12 GHz • GATE LENGTH: ≤ 0.20 µm • GATE WIDTH: 200 µm • LOW COST ...

Page 2

ABSOLUTE MAXIMUM RATINGS SYMBOLS PARAMETERS V Drain to Source Voltage DS V Gate to Source Voltage GS I Drain Current D I Gate Current G P Total Power Dissipation T T Channel Temperature CH T Storage Temperature stg Note: 1. ...

Page 3

TYPICAL COMMON SOURCE SCATTERING PARAMETERS 1.0 0.5 18 GHz 18 GHz 0 - 0 FREQUENCY S 11 (GHz) MAG ANG 2.0 0.969 -24.84 2.5 0.957 -30.87 3.0 0.944 ...

Page 4

NE325S01 NONLINEAR MODEL SCHEMATIC GATE FET NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters VTO -0.8 RG VTOSC 0 RD ALPHA 8 RS BETA 0.103 RGMET GAMMA 0.092 KF GAMMADC 0. TNOM DELTA 1 XTI VBI 0.715 EG IS ...

Page 5

OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE S01 2.0 ± 0 0.65 TYP. 1.9 ± 0.2 1.6 0.125 ± 0.05 0.4 MAX 4.0 ± 0.2 ORDERING INFORMATION PART SUPPLY FORM NUMBER NE325S01 Bulk NE325S01-T1 Tape & ...

Related keywords