NE3210S01-T1B-A NEC/CEL, NE3210S01-T1B-A Datasheet - Page 4

• Manufacturer Part Number: NE3210S01-T1B-A
• Description: MOSFET Super Lo Noise HJFET
• Manufacturer: NEC/CEL

Specifications of NE3210S01-T1B-A

• Rohs: yes
• Drain-source Breakdown Voltage: 4 V
• Gate-source Breakdown Voltage: - 3 V
• Continuous Drain Current: 10 mA
• Mounting Style: SMD/SMT
• Package / Case: SO-1
• Power Dissipation: 165 mW
• Factory Pack Quantity: 4000

NONLINEAR MODEL
FET NONLINEAR MODEL PARAMETERS
NE325S01
(1) Series IV Libra TOM Model
SCHEMATIC
Parameters
GAMMADC
GAMMA
DELTA1
DELTA2
VTOSC
ALPHA
DELTA
CGDO
CGSO
BETA
CDS
RDB
CBS
VBR
VTO
TAU
VBI
RIS
RID
FC
IS
Q
N
0.13e-12
0.02e-12
0.3e-12
Infinity
0.092
0.715
3e-13
4e-12
0.103
5000
0.08
1.22
1e-9
-0.8
Q1
0.3
0.1
0.5
0
8
2
1
0
0
Parameters
BETATCE
RGMET
VTOTC
TNOM
GATE
FFE
RG
XTI
RD
RS
EG
KF
AF
1.43
CGS_PKG
6 ohms
Q1
0.07pF
27
3
2
2
0
0
1
3
0
0
1
Rgx
CGD_PKG
0.001pF
0.69nH
Lgx
(1)
Q1
0.07nH
Rsx
0.06 ohms
Lsx
SOURCE
0.6nH
Ldx
MODEL RANGE
Frequency:
Bias:
Date:
UNITS
time
capacitance
inductance
resistance
voltage
current
6 ohms
Parameter
Rdx
0.1 to 18 GHz
V
I
2/98
DSS
DS
= 1 V to 3 V, I
= 59.9 ma @ V
CDS_PKG
0.05PF
DRAIN
seconds
farads
henries
ohms
volts
amps
D
Units
GS
= 5 mA to 30 mA
= 0, V
DS
= 2 V