TN2640N3-P002-G Supertex, TN2640N3-P002-G Datasheet

TN2640N3-P002-G

Manufacturer Part Number

TN2640N3-P002-G

Description

MOSFET 400V 5Ohm

Manufacturer

Supertex

Datasheet

1.TN2640N3-P013-G.pdf (2 pages)

Specifications of TN2640N3-P002-G

Product Category

MOSFET

Rohs

yes

Transistor Polarity

N-Channel

Drain-source Breakdown Voltage

400 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

2 A

Resistance Drain-source Rds (on)

5 Ohms

Configuration

Single

Maximum Operating Temperature

+ 150 C

Mounting Style

Through Hole

Package / Case

TO-92

Minimum Operating Temperature

- 55 C

Power Dissipation

1 W

Factory Pack Quantity

2000

Typical Turn-off Delay Time

20 ns

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Applications:

►

3-Lead TO-252 (K4)

Summary

3-Lead TO-92 (N3)

8-Lead SOIC (LG)

DC-DC converters

Solid state relays

Ultrasound pulsers

Telecom switches

Photo voltaic drivers

Analog switches

Product

Sheet

120711

Product Overview:

TN2640K4 N-Channel Enhancement-Mode DMOS FET. The device features fast switching

speeds, low parasitic capacitances and a low gate threshold for ease of driving the FET.

It’s D-Pak package gives designers the flexibility to use the device in a wide range of power

switching and amplifying applications. It has a high breakdown voltage (400V), a low on-

resistance (5.0W) and a low input capacitance (225pF) for fast switching applications. Adding

these features into the D-Pak package increases the power dissipation capability to 2.5W in

small footprints utilizing surface mount technology. It’s low input and output leakage feature

improves standby power dissipation while minimizing signal attenuation.

Features:

Low threshold — 2.0V max.

High input impedance

Low input capacitance

Fast switching speeds

Low on resistance

Free from secondary breakdown

compared to bipolar transistors

Low input and output leakage

Addition of D-Pak option

OUTPUT

INPUT

N-Channel Enhancement-Mode DMOS FET

VDD

10V

10%

d(ON)

Switching Waveform and Test Circuit

10%

(ON)

90%

Benefits:

Can be operated directly from logic level input signals.

Eliminates the need for a level translator.

Eliminates the need to supply DC current into the

gate.

Improves overall efficiency.

Maximizes switching speed to help improve overall

efficiency.

Improves overall efficiency

Maximizes efficiency, minimizes power dissipation.

Improves overall reliability.

Improves measurement accuracy. Minimizes signal

attenuation.

Increases the power dissipation capability for surface

mount technology to 2.5W.

d(OFF)

(OFF)

90%

10%

Generator

Pulse

INPUT

GEN

TN2640

VDD

D.U.T.

OUTPUT

Related parts for TN2640N3-P002-G

TN2640N3-P002-G Summary of contents

Page 1

Product Summary Sheet Applications: ► DC-DC converters ► Solid state relays ► Ultrasound pulsers ► Telecom switches ► Photo voltaic drivers ► Analog switches OUTPUT Product Overview: 3-Lead TO-252 (K4) TN2640K4 N-Channel Enhancement-Mode DMOS FET. The device features fast switching ...

Page 2

... Package Option TN2640K4-G 3-Lead TO-252 (Green) TN2640LG-G 8-Lead SOIC (Green) TN2640N3-G 3-Lead TO-92 (Green) -G indicates the part is RoHS compliant (Green). Product Contact For any questions regarding the TN2640 please contact your local area Supertex sales office, or contact the main office in the US at: ...

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