2SC6017-E ON Semiconductor, 2SC6017-E Datasheet - Page 3

• Manufacturer Part Number: 2SC6017-E
• Description: Transistors Bipolar - BJT BIP NPN 10A 50V
• Manufacturer: ON Semiconductor

Specifications of 2SC6017-E

• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 100 V
• Collector- Emitter Voltage Vceo Max: 50 V
• Emitter- Base Voltage Vebo: 6 V
• Collector-emitter Saturation Voltage: 180 mV
• Maximum Dc Collector Current: 13 A
• Gain Bandwidth Product Ft: 200 MHz
• Dc Collector/base Gain Hfe Min: 200
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-251
• Continuous Collector Current: 10 A
• Maximum Power Dissipation: 20 W
• Minimum Operating Temperature: - 55 C

1000
--5.0
--4.5
--4.0
--3.5
--3.0
--2.5
--2.0
--1.5
--1.0
--0.5
--1.0
--0.8
--0.6
--0.4
--0.2
100
100
--0.01
--0.1
0
0
7
5
3
2
7
5
5
3
2
7
5
3
0
0
2SA2169
2SA2169
V CE = --2V
--0.1
2
2
Collector-to-Emitter Voltage, V CE -- V
3
3
--0.2
Collector-to-Base Voltage, V CB -- V
Base-to-Emitter Voltage, V BE -- V
--0.5
5
5
--0.3
Collector Current, I C -- A
7
7
--0.1
--1.0
Cob -- V CB
--0.4
I C -- V CE
I C -- V BE
h FE -- I C
2
2
--1.0
--0.5
3
3
5 7
--0.6
5
--1.0
7
--0.7
--10
--1.5
2
--0.8
2SA2169
V CE = --2V
2
3
2SA2169
f=1MHz
--2mA
2SA2169/2SC6017
3
--0.9
IT08961
IT08963
IT08965
IT08967
I B =0
5 7
5
--2.0
--1.0
--10
7
1000
100
100
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
1.0
0.8
0.6
0.4
0.2
0.01
0
0
7
5
3
2
7
5
3
2
7
5
3
2
0.1
0
0
2SC6017
2SC6017
V CE =2V
0.1
2
2
Collector-to-Emitter Voltage, V CE -- V
3
3
Collector-to-Base Voltage, V CB -- V
0.2
Base-to-Emitter Voltage, V BE -- V
0.5
5
5
Collector Current, I C -- A
0.3
7
7
0.1
1.0
Cob -- V CB
I C -- V CE
I C -- V BE
0.4
h FE -- I C
2
2
1.0
0.5
3
3
5 7
0.6
5
7
1.0
0.7
10
1.5
2
0.8
2
No. 8275-3/10
3
2SC6017
f=1MHz
2SC6017
V CE =2V
3
2mA
0.9
I B =0
IT08962
IT08964
IT08966
IT08968
5 7
5
2.0
1.0
10
7