2SC6017-E ON Semiconductor, 2SC6017-E Datasheet - Page 9

• Manufacturer Part Number: 2SC6017-E
• Description: Transistors Bipolar - BJT BIP NPN 10A 50V
• Manufacturer: ON Semiconductor

Specifications of 2SC6017-E

• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 100 V
• Collector- Emitter Voltage Vceo Max: 50 V
• Emitter- Base Voltage Vebo: 6 V
• Collector-emitter Saturation Voltage: 180 mV
• Maximum Dc Collector Current: 13 A
• Gain Bandwidth Product Ft: 200 MHz
• Dc Collector/base Gain Hfe Min: 200
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-251
• Continuous Collector Current: 10 A
• Maximum Power Dissipation: 20 W
• Minimum Operating Temperature: - 55 C

2SA2169/2SC6017
Outline Drawing
2SA2169-E, 2SC6017-E
Mass (g) Unit
0.315
mm
* For reference
No. 8275-9/10