IS43R16160B-5TL-TR ISSI, Integrated Silicon Solution Inc, IS43R16160B-5TL-TR Datasheet - Page 31

• Manufacturer Part Number: IS43R16160B-5TL-TR
• Description: IC DDR SDRAM 256MBIT 66TSOP
• Manufacturer: ISSI, Integrated Silicon Solution Inc
• Type: SDRAMr

Specifications of IS43R16160B-5TL-TR

• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 256M (16Mx16)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 2.5 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 66-TSOPII
• Organization: 16Mx16
• Density: 256Mb
• Address Bus: 15b
• Access Time (max): 700ps
• Maximum Clock Rate: 200MHz
• Operating Supply Voltage (typ): 2.5V
• Package Type: TSOP-II
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.3V
• Pin Count: 66
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

DDR SDRAM (Rev.1.1)
IS43R83200B
IS43R16160B, IC43R16160B
Integrated Silicon Solution, Inc.
Rev. B
10/31/08
[Read Interrupted by Burst Stop]
is minimum 1 CLK. A TERM command to output disable latency is equivalent to the /CAS Latency.
As a result, READ to TERM interval determines valid data length to be output. The figure below
shows examples of BL=8.
Burst read operation can be interrupted by a burst stop command(TERM). READ to TERM interval
CL=2.0
CL=2.5
Command
Command
Command
Command
Command
Command
Preliminary
DQS
DQS
DQS
DQS
/CLK
Preliminary
DQS
DQS
CLK
DQ
DQ
DQ
DQ
DQ
DQ
READ
READ
Read Interrupted by TERM (BL=8)
READ
READ
READ
READ
TERM
TERM
TERM
TERM
Q0
Q0
Q0
256M Double Data Rate Synchronous DRAM
Q1
Q1
Q1
TERM
Q0
Q0
TERM
Q0
Q2
Q2
Q1
Q1
Q1
Q3
Q3
Q2
Q2
Q4
Q3
Q3
Q5
Q4
Q5
A3S56D30/40ETP
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