NJVMJD47T4G ON Semiconductor, NJVMJD47T4G Datasheet - Page 3

• Manufacturer Part Number: NJVMJD47T4G
• Description: Transistors Bipolar - BJT BIP NPN 1A 250V TR
• Manufacturer: ON Semiconductor

2.5
1.5
0.5
T
A
2
1
0
0.07
0.05
0.03
0.02
0.01
200
100
0.7
0.5
0.3
0.2
0.1
60
40
20
10
25
20
15
10
T
6
4
2
1
5
0
C
0.02
0.01
25
SINGLE PULSE
T
0.02
0.02 0.03 0.05
J
D = 0.5
0.05
0.04
= 150C
25C
0.1
- 55C
0.2
T
50
0.06
C
Figure 3. DC Current Gain
I
C
Figure 1. Power Derating
, COLLECTOR CURRENT (AMPS)
T
0.01
A
0.1
(SURFACE MOUNT)
T, TEMPERATURE (C)
75
0.1
0.2
0.2 0.3
100
0.4
TYPICAL CHARACTERISTICS
0.6
V
0.5
CE
125
= 10 V
Figure 5. Thermal Response
http://onsemi.com
1
1
150
2
2
3
t, TIME (ms)
R
R
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
J(pk)
qJC(t)
qJC
3
V
APPROX
EB(off)
= 8.33C/W MAX
- T
+11 V
APPROX
1.4
1.2
0.8
0.6
0.4
0.2
= r(t) R
+11 V
V
1
0
C
0.02
V
5
in
in
= P
TURN-OFF PULSE
Figure 2. Switching Time Equivalent Circuit
0
TURN-ON PULSE
qJC
(pk)
1
q
10
JC(t)
0.04
t
2
t
1
0.06
20
I
C
t
3
Figure 4. “On” Voltages
, COLLECTOR CURRENT (AMPS)
V
V
30
BE(sat)
CE(sat)
10 < t
0.1
V
CC
V
DUTY CYCLE  2%
APPROX - 9 V
t
t
3
in
1
P
< 15 ns
T
2
50
 7 ns
@ I
(pk)
@ I
J
51
< 500 ms
V
= 25C
DUTY CYCLE, D = t
C
BE(on)
C
C
0.2
jd
/I
/I
B
R
DESIRED CURRENT LEVELS.
t
<< C
B
1
B
= 5
= 5
100
@ V
and R
t
R
2
eb
B
R
CE
C
0.4
C
= 4 V
- 4 V
200 300
VARIED TO OBTAIN
0.6
1
/t
2
1
500
SCOPE
1 k
2