NJVMJD47T4G ON Semiconductor, NJVMJD47T4G Datasheet - Page 4

• Manufacturer Part Number: NJVMJD47T4G
• Description: Transistors Bipolar - BJT BIP NPN 1A 250V TR
• Manufacturer: ON Semiconductor

0.005
0.05
0.02
0.01
0.5
0.2
0.1
0.05
0.02
0.01
0.5
0.2
0.1
5
2
1
1
0.02
5
Figure 6. Active Region Safe Operating Area
T
C
 25C
CURVES APPLY BELOW
RATED V
10
V
CE
0.05
SECOND BREAKDOWN LIMIT
THERMAL LIMIT @ 25C
WIRE BOND LIMIT
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
I
CEO
C
1 ms
, COLLECTOR CURRENT (AMPS)
Figure 7. Turn−On Time
20
0.1
t
t
r
d
dc
50
0.2
500 ms
MJD47
MJD50
100
100 ms
0.5
T
V
I
C
J
CC
/I
= 25C
B
200
= 200 V
= 5
300
1
http://onsemi.com
500
2
4
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
v 150_C. T
Figure 5. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
0.05
0.5
0.2
0.1
There are two limitations on the power handling ability of
The data of Figure 6 is based on T
5
2
1
0.02
0.05
J(pk)
I
C
Figure 8. Turn-Off Time
, COLLECTOR CURRENT (AMPS)
may be calculated from the data in
0.1
0.2
t
t
s
f
J(pk)
0.5
= 150_C; T
T
V
I
C
J
CC
/I
= 25C
B
1
= 200 V
= 5
C
− V
J(pk)
C
2
CE
is