BC337-25 T/R NXP Semiconductors, BC337-25 T/R Datasheet - Page 10

• Manufacturer Part Number: BC337-25 T/R
• Description: Transistors Bipolar - BJT TRANS GP TAPE RADIAL
• Manufacturer: NXP Semiconductors

Specifications of BC337-25 T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 50 V
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 0.5 A
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 160 at 100 mA at 1 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-54
• Dc Current Gain Hfe Max: 160 at 100 mA at 1 V
• Maximum Power Dissipation: 625 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 2000
• Part # Aliases: BC337-25,116

NXP Semiconductors
BC817_BC817W_BC337_6
Product data sheet
Fig 12. Selection -40: Collector current as a function of collector-emitter voltage; typical values
(10) I
(1) I
(2) I
(3) I
(4) I
(5) I
(6) I
(7) I
(8) I
(9) I
T
B
B
B
B
B
B
B
B
B
B
amb
= 12.0 mA
= 10.8 mA
= 9.6 mA
= 8.4 mA
= 7.2 mA
= 6.0 mA
= 4.8 mA
= 3.6 mA
= 2.4 mA
= 1.2 mA
= 25 °C
(A)
I
C
1.2
0.8
0.4
0
0
Rev. 06 — 17 November 2009
1
2
(6)
(5)
3
BC817; BC817W; BC337
(4)
45 V, 500 mA NPN general-purpose transistors
(3)
4
006aaa142
(2)
V
CE
(10)
(V)
(1)
(7)
(8)
(9)
5
© NXP B.V. 2009. All rights reserved.
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