BC337-25 T/R NXP Semiconductors, BC337-25 T/R Datasheet - Page 6

• Manufacturer Part Number: BC337-25 T/R
• Description: Transistors Bipolar - BJT TRANS GP TAPE RADIAL
• Manufacturer: NXP Semiconductors

Specifications of BC337-25 T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 50 V
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 0.5 A
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 160 at 100 mA at 1 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-54
• Dc Current Gain Hfe Max: 160 at 100 mA at 1 V
• Maximum Power Dissipation: 625 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 2000
• Part # Aliases: BC337-25,116

NXP Semiconductors
BC817_BC817W_BC337_6
Product data sheet
Fig 1.
Fig 3.
h
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
FE
400
300
200
100
0
10
V
Selection -16: DC current gain as a function of
collector current; typical values
V
Selection -40: DC current gain as a function of collector current; typical values
−1
CE
amb
amb
amb
CE
amb
amb
amb
= 1 V
= 1 V
= 150 °C
= 25 °C
= −55 °C
= 150 °C
= 25 °C
= −55 °C
1
(1)
(2)
(3)
10
h
FE
800
600
400
200
10
0
10
2
−1
I
006aaa131
C
(mA)
Rev. 06 — 17 November 2009
10
1
3
(1)
(2)
(3)
10
Fig 2.
BC817; BC817W; BC337
h
(1) T
(2) T
(3) T
FE
45 V, 500 mA NPN general-purpose transistors
600
400
200
10
0
10
V
Selection -25: DC current gain as a function of
collector current; typical values
2
−1
amb
amb
amb
CE
I
006aaa133
C
(mA)
= 1 V
= 150 °C
= 25 °C
= −55 °C
10
1
3
(1)
(2)
(3)
10
10
© NXP B.V. 2009. All rights reserved.
2
I
006aaa132
C
(mA)
10
3
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