EMA3T2R ROHM Semiconductor, EMA3T2R Datasheet - Page 3

• Manufacturer Part Number: EMA3T2R
• Description: Transistors Switching - Resistor Biased TRANS DIGI BJT PNP 50V 100MA 5PIN
• Manufacturer: ROHM Semiconductor

Specifications of EMA3T2R

• Rohs: yes
• Configuration: Dual Common Emitter
• Transistor Polarity: PNP
• Typical Input Resistor: 4.7 KOhms
• Mounting Style: SMD/SMT
• Package / Case: EMT-5
• Dc Collector/base Gain Hfe Min: 100
• Collector- Emitter Voltage Vceo Max: 50 V
• Peak Dc Collector Current: 100 mA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C

EMA3 / UMA3N / FMA3A
lElectrical characteristic curves(Ta = 25°C)
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-0.001
-0.01
-0.1
-10
Fig.1 Grounded emitter propagation
-1
Fig.3 DC Current gain
0
BASE TO EMITTER VOLTAGE : V
V
characteristics
CE
COLLECTOR CURRENT : I
vs. Collector Current
= -5V
-0.5
Ta=100ºC
-1
-40ºC
25ºC
-1.5
C
(mA)
BE
(V)
-2
3/6
-100
-80
-60
-40
-20
Fig.2 Grounded emitter output
Fig.4 Collector-emitter saturation voltage
0
0
Ta=25ºC
vs. Collector Current
characteristics
COLLECTOR CURRENT : I
COLLECTOR TO EMITTER
-2
VOLTAGE : V
-4
-6
CE
(V)
2012.06 - Rev.B
-8
C
Data Sheet
(mA)
-10
-500μA
-450μA
-350μA
-300μA
-250μA
-200μA
-150μA
-100μA
0A
I
-400μA
-50μA
B
=