BC817-25E6327 Infineon Technologies, BC817-25E6327 Datasheet - Page 7

• Manufacturer Part Number: BC817-25E6327
• Description: Transistors Bipolar - BJT NPN 45 V 500 mA
• Manufacturer: Infineon Technologies

Specifications of BC817-25E6327

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 50 V
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 1 A
• Gain Bandwidth Product Ft: 170 MHz
• Dc Collector/base Gain Hfe Min: 160
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Continuous Collector Current: 500 mA
• Maximum Power Dissipation: 330 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000

Total power dissipation P
BC817K, BC818K
Permissible Pulse Load R
BC817K, BC818K
10
10
10
10
550
450
400
350
300
250
200
150
100
50
-1
0
2
1
0
10
0
-6
15
10
30
-5
45
10
-4
60
75
10
-3
90 105 120
tot
thJS
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
10
= ƒ (T
-2
= ƒ (t
S
s
)
T
p
P
)
150
10
0
7
Total power dissipation P
BC817KW, BC818KW
Permissible Pulse Load
P
BC817K, BC818K
totmax
mW
550
450
400
350
300
250
200
150
100
10
10
10
10
50
-
0
3
2
1
0
10
0
/P
-6
totDC
15
10
30
-5
= ƒ (t
45
10
BC817K.../BC818K...
p
-4
60
)
75
10
-3
90 105 120 °C
tot
10
= ƒ (T
-2
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
2011-09-19
S
)
s
T
T
S
P
150
10
0