BC817-25E6327 Infineon Technologies, BC817-25E6327 Datasheet - Page 9

• Manufacturer Part Number: BC817-25E6327
• Description: Transistors Bipolar - BJT NPN 45 V 500 mA
• Manufacturer: Infineon Technologies

Specifications of BC817-25E6327

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 50 V
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 1 A
• Gain Bandwidth Product Ft: 170 MHz
• Dc Collector/base Gain Hfe Min: 160
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Continuous Collector Current: 500 mA
• Maximum Power Dissipation: 330 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000

Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
Pin 1
0.4
1) Lead width can be 0.6 max. in dambar area
0.25
+0.1
-0.05
1)
Package SOT23
M
Pin 1
B C
2.9
1
1.9
4
±0.1
EH
0.8
3
3.15
2
0.95
0.9
C
0.8
1.2
B
s
9
Manufacturer
2005, June
Date code (YM)
BCW66
Type code
0.2
1.15
0.2
M
A
1
±0.1
0.1 MAX.
BC817K.../BC818K...
A
2011-09-19