TIP33AG ON Semiconductor, TIP33AG Datasheet - Page 3

• Manufacturer Part Number: TIP33AG
• Description: Transistors Bipolar - BJT 10A 60V 80W NPN
• Manufacturer: ON Semiconductor

Specifications of TIP33AG

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 60 V
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 60 V
• Maximum Dc Collector Current: 10 A
• Gain Bandwidth Product Ft: 3 MHz
• Dc Collector/base Gain Hfe Min: 40
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-93-3 (TO-218)
• Continuous Collector Current: 10 A
• Maximum Power Dissipation: 80 W
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 30

2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 2)
DYNAMIC CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 2)
Collector−Emitter Cutoff Current
Collector−Emitter Cutoff Current
Emitter−Base Cutoff Current
DC Current Gain
Collector−Emitter Saturation Voltage
Base−Emitter On Voltage
Small−Signal Current Gain
Current−Gain — Bandwidth Product
(I
(V
(V
(V
(V
(I
(I
(I
(I
(I
(I
(I
(I
C
C
C
C
C
C
C
C
C
CE
CE
CE
EB
= 30 mA, I
= 1.0 A, V
= 3.0 A, V
= 3.0 A, I
= 10 A, I
= 3.0 A, V
= 10 A, V
= 0.5 A, V
= 0.5 A, V
= 5.0 V, I
= 30 V, I
= 60 V, I
= Rated V
B
B
CE
CE
CE
CE
CE
CE
B
B
B
= 2.5 A)
C
= 0.3 A)
= 0)
= 0)
= 0)
CEO
= 4.0 V)
= 0)
= 4.0 V)
= 4.0 V)
= 4.0 V)
= 10 V, f = 1.0 MHz)
= 10 V, f = 1.0 kHz)
, V
EB
= 0)
Characteristic
(T
C
= 25_C unless otherwise noted)
http://onsemi.com
3
TIP33C
TIP33A
TIP33C
TIP33A
V
Symbol
V
V
CEO(sus)
CE(sat)
I
I
I
BE(on)
CEO
h
CES
EBO
h
f
FE
T
fe
Min
100
3.0
60
40
20
20
−
−
−
−
−
−
−
Max
100
0.7
0.4
1.0
1.0
4.0
1.6
3.0
−
−
−
−
−
MHz
Unit
Vdc
Vdc
Vdc
mA
mA
mA
−
−