TIP33AG ON Semiconductor, TIP33AG Datasheet - Page 4

• Manufacturer Part Number: TIP33AG
• Description: Transistors Bipolar - BJT 10A 60V 80W NPN
• Manufacturer: ON Semiconductor

Specifications of TIP33AG

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 60 V
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 60 V
• Maximum Dc Collector Current: 10 A
• Gain Bandwidth Product Ft: 3 MHz
• Dc Collector/base Gain Hfe Min: 40
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-93-3 (TO-218)
• Continuous Collector Current: 10 A
• Maximum Power Dissipation: 80 W
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 30

FORWARD BIAS
voltage and current conditions these devices can withstand
during forward bias. The data is based on T
is variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10%, and must be
derated thermally for T
The Forward Bias Safe Operating Area represents the
5.0
3.0
2.0
1.0
0.5
0.2
0.1
15
10
1.0
Figure 2. Maximum Rated Forward Bias
T
2.0 3.0
C
SECONDARY BREAKDOWN LIMIT
BONDING WIRE LIMIT
THERMAL LIMIT
V
CE
= 25°C
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Safe Operating Area
C
5.0 7.0
> 25_C.
10 ms
10
500
200
100
5.0
50
20
10
0.1
dc
1.0 ms
20
TIP33A
TIP33C
C
= 25_C; T
30
Figure 1. DC Current Gain
50
NPN
PNP
300 ms
I
http://onsemi.com
C
, COLLECTOR CURRENT (A)
70
J(pk)
100
4
1.0
REVERSE BIAS
voltage and current conditions these devices can withstand
during reverse biased turn−off. This rating is verified under
clamped conditions so the device is never subjected to an
avalanche mode.
5.0
20
15
10
The Reverse Bias Safe Operating Area represents the
0
0
V
T
Figure 3. Maximum Rated Forward Bias
CE
J
= 25°C
V
= 4.0 V
CE
20
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Safe Operating Area
10
40
60
L = 200 mH
I
V
T
C
C
BE(off)
/I
B
= 100°C
≥ 5.0
= 0 to 5.0 V
80
100