BC857BS-7 Diodes Inc., BC857BS-7 Datasheet - Page 2

• Manufacturer Part Number: BC857BS-7
• Description: Transistors Bipolar - BJT PNP BIPOLAR
• Manufacturer: Diodes Inc.

Specifications of BC857BS-7

• Product Category: Transistors Bipolar - BJT
• Configuration: Dual
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 50 V
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 0.1 A
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 220 at 2 mA at 5 V
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-363
• Maximum Power Dissipation: 200 mW
• Minimum Operating Temperature: - 55 C
• Factory Pack Quantity: 3000

Electrical Characteristics
Maximum Ratings
Thermal Characteristics
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Peak Base Current
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient Air (Note 5)
Operating and Storage Temperature Range
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Collector-Cutoff Current
Emitter Cutoff Current
Gain Bandwidth Product
Collector-Base Capacitance
Emitter-Base Capacitance
Notes:
BC857BS
Datasheet Number DS30373 Rev. 7 - 2
5. Device mounted on FR-4 PCB. Diodes Inc. suggested pad layout document can be found on our website at http://www.diodes.com
6. Short duration pulse test used to minimize self-heating effect.
Characteristic (Note 6)
Characteristic
Characteristic
@T
A
= 25°C unless otherwise specified
@T
@T
A
= 25°C unless otherwise specified
A
= 25°C unless otherwise specified
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Symbol
2 of 4
V
V
BV
V
BV
BV
C
C
CE(sat)
I
I
BE(sat)
BE(on)
h
CBO
CEO
CBO
EBO
f
FE
CBO
CEO
EBO
T
T
Symbol
Symbol
J
V
V
V
R
, T
I
I
P
CBO
CEO
EBO
CM
I
BM
θ JA
C
-580
D
Min
220
100
-50
-45
STG
—
—
—
—
—
—
—
-5
-700
-665
Typ
11
—
—
—
—
—
—
—
—
—
—
Max
-100
-400
-750
-100
-4.0
475
-55 to +150
-15
—
—
—
—
—
—
3
Value
Value
-100
-200
-200
-5.0
200
625
-50
-45
MHz
Unit
mV
mV
mV
nA
µA
nA
pF
pF
—
V
V
V
Test Condition
I
I
I
V
I
I
I
V
V
V
V
V
f = 100MHz
V
V
C
C
E
C
C
C
CE
CE
CB
CB
EB
CE
CB
EB
= 100μA, I
= 100μA, I
= 10mA, I
= -10mA, I
= -100mA, I
= -10mA, I
= -5.0V, I
= -5.0V, I
= -30V
= -30V, T
= -5.0V, I
= -5.0V, I
= -10V, f = 1.0MHz
= -0.5V, f = 1.0MHz
BC857BS
© Diodes Incorporated
°C/W
B
Unit
Unit
mW
mA
mA
mA
B
C
B
B
°C
V
V
V
C
C
C
C
January 2012
= 0
A
B
= 0
= 0
= -0.5mA
= -0.5mA
= 0
= -2.0mA
= -2.0mA
= 150°C
= -10mA,
= -5.0mA