BC857BS-7 Diodes Inc., BC857BS-7 Datasheet - Page 3

• Manufacturer Part Number: BC857BS-7
• Description: Transistors Bipolar - BJT PNP BIPOLAR
• Manufacturer: Diodes Inc.

Specifications of BC857BS-7

• Product Category: Transistors Bipolar - BJT
• Configuration: Dual
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 50 V
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 0.1 A
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 220 at 2 mA at 5 V
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-363
• Maximum Power Dissipation: 200 mW
• Minimum Operating Temperature: - 55 C
• Factory Pack Quantity: 3000

Package Outline Dimensions
BC857BS
Datasheet Number DS30373 Rev. 7 - 2
200
150
250
100
0.5
0.4
0.3
0.2
50
0.1
0
0
0.1
0
Fig. 3 Typical Collector-Emitter Saturation Voltage
Fig. 1 Power Dissipation vs. Ambient Temperature
T , AMBIENT TEMPERATURE ( C)
I , COLLECTOR CURRENT (mA)
C
A
K
J
1
vs. Collector Current
H
A
D
100
10
F
B C
L
100
°
M
1,000
200
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1,000
1,000
100
Fig. 4 Typical Gain-Bandwidth Product vs. Collector Current
10
100
10
1
1
Fig. 2 Typical DC Current Gain vs. Collector Current
1
Dim
All Dimensions in mm
M
A
B
C
D
H
K
α
F
J
L
I , COLLECTOR CURRENT (mA)
C
SOT363
I , COLLECTOR CURRENT (mA)
C
0.10
1.15
2.00
0.40
1.80
0.90
0.25
0.10
Min
0°
0
0.65 Typ
Max
0.30
1.35
2.20
0.45
2.20
0.10
1.00
0.40
0.22
8°
10
10
BC857BS
© Diodes Incorporated
January 2012
100
100