M25PX16-VMN6TP NUMONYX, M25PX16-VMN6TP Datasheet - Page 13

• Manufacturer Part Number: M25PX16-VMN6TP
• Description: IC FLASH 16MBIT 75MHZ 8SOIC
• Manufacturer: NUMONYX
• Series: Forté™r

Specifications of M25PX16-VMN6TP

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 16M (2M x 8)
• Speed: 75MHz
• Interface: SPI, 3-Wire Serial
• Voltage - Supply: 2.3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: M25PX16-VMN6TPTR

4
4.1
4.2
4.3
4.4
Operating features
Page programming
To program one data byte, two instructions are required: Write Enable (WREN), which is
one byte, and a Page Program (PP) sequence, which consists of four bytes plus data. This
is followed by the internal Program cycle (of duration t
To spread this overhead, the Page Program (PP) instruction allows up to 256 bytes to be
programmed at a time (changing bits from 1 to 0), provided that they lie in consecutive
addresses on the same page of memory.
For optimized timings, it is recommended to use the Page Program (PP) instruction to
program all consecutive targeted bytes in a single sequence versus using several Page
Program (PP) sequences with each containing only a few bytes (see
and
Dual Input Fast Program
The Dual Input Fast Program (DIFP) instruction makes it possible to program up to 256
bytes using two input pins at the same time (by changing bits from 1 to 0).
For optimized timings, it is recommended to use the Dual Input Fast Program (DIFP)
instruction to program all consecutive targeted bytes in a single sequence rather to using
several Dual Input Fast Program (DIFP) sequences each containing only a few bytes (see
Section 6.12: Dual Input Fast Program
Subsector Erase, Sector Erase and Bulk Erase
The Page Program (PP) instruction allows bits to be reset from 1 to 0. Before this can be
applied, the bytes of memory need to have been erased to all 1s (FFh). This can be
achieved either a subsector at a time, using the Subsector Erase (SSE) instruction, a sector
at a time, using the Sector Erase (SE) instruction, or throughout the entire memory, using
the Bulk Erase (BE) instruction. This starts an internal Erase cycle (of duration t
t
The Erase instruction must be preceded by a Write Enable (WREN) instruction.
Polling during a Write, Program or Erase cycle
A further improvement in the time to Write Status Register (WRSR), Program OTP (POTP),
Program (PP), Dual Input Fast Program (DIFP) or Erase (SSE, SE or BE) can be achieved
by not waiting for the worst case delay (t
(WIP) bit is provided in the Status Register so that the application program can monitor its
value, polling it to establish when the previous Write cycle, Program cycle or Erase cycle is
complete.
BE
).
Table 18: AC
characteristics).
(DIFP)).
W
, t
PP
, t
SSE
, t
SE
PP
, or t
).
BE
). The Write In Progress
Page Program (PP)
SSE
, t
SE
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or