M25PE16-VMW6TG NUMONYX, M25PE16-VMW6TG Datasheet - Page 43

IC FLASH 16MBIT 75MHZ 8SOIC

M25PE16-VMW6TG

Manufacturer Part Number
M25PE16-VMW6TG
Description
IC FLASH 16MBIT 75MHZ 8SOIC
Manufacturer
NUMONYX
Series
Forté™r
Datasheet

Specifications of M25PE16-VMW6TG

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
16M (2M x 8)
Speed
75MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-SOIC (5.3mm Width), 8-SOP, 8-SOEIAJ
Package
8SOIC W
Cell Type
NOR
Density
16 Mb
Architecture
Sectored
Block Organization
Symmetrical
Typical Operating Supply Voltage
3.3 V
Sector Size
64KByte x 32
Timing Type
Synchronous
Interface Type
Serial-SPI
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
M25PE16-VMW6TGTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M25PE16-VMW6TG
Manufacturer:
MAXIM
Quantity:
14 500
Part Number:
M25PE16-VMW6TG
Manufacturer:
Numonyx
Quantity:
15 000
Part Number:
M25PE16-VMW6TG
Manufacturer:
ST
Quantity:
20 000
Part Number:
M25PE16-VMW6TG
0
Company:
Part Number:
M25PE16-VMW6TG
Quantity:
6 000
M25PE16
7
Power-up and power-down
At power-up and power-down, the device must not be selected (that is Chip Select (S) must
follow the voltage applied on V
A safe configuration is provided in
To avoid data corruption and inadvertent write operations during power-up, a power on reset
(POR) circuit is included. The logic inside the device is held reset while V
power on reset (POR) threshold voltage, V
does not respond to any instruction.
Moreover, the device ignores all write enable (WREN), page write (PW), page program (PP),
page erase (PE), sector erase (SE), subsector erase (SSE), bulk erase (BE), write status
register (WRSR) and write to lock register (WRLR) instructions until a time delay of t
has elapsed after the moment that V
operation of the device is not guaranteed if, by this time, V
write, program or erase instructions should be sent until the later of:
These values are specified in
If the delay, t
selected for read instructions even if the t
As an extra protection, the Reset (Reset) signal could be driven Low for the whole duration
of the power-up and power-down phases.
At power-up, the device is in the following state:
Normal precautions must be taken for supply rail decoupling, to stabilize the V
Each device in a system should have the V
the package pins (generally, this capacitor is of the order of 100 nF).
At power-down, when V
(POR) threshold voltage, V
to any instruction. The designer needs to be aware that if a power-down occurs while a
write, program or erase cycle is in progress, some data corruption can result.
V
V
t
t
The device is in the standby mode (not the deep power-down mode).
The write enable latch (WEL) bit is reset.
The write in progress (WIP) bit is reset
The lock registers are reset (write lock bit, lock down bit) = (0, 0)
PUW
VSL
CC
SS
(min) at power-up, and then for a further delay of t
at power-down
after V
after V
VSL
, has elapsed, after V
CC
CC
passed the V
passed the V
CC
WI
drops from the operating voltage, to below the power on reset
, all operations are disabled and the device does not respond
Table
CC
CC
) until V
WI
Section 3: SPI
(min) level
11.
threshold
CC
CC
rises above the V
has risen above V
CC
PUW
CC
WI
reaches the correct value:
– all operations are disabled, and the device
line decoupled by a suitable capacitor close to
delay is not yet fully elapsed.
modes.
WI
CC
VSL
CC
threshold. However, the correct
is still below V
(min), the device can be
Power-up and power-down
CC
CC
is less than the
CC
(min). No
supply.
PUW
43/58

Related parts for M25PE16-VMW6TG