CY62148ELL-55SXIT Cypress Semiconductor Corp, CY62148ELL-55SXIT Datasheet - Page 5

• Manufacturer Part Number: CY62148ELL-55SXIT
• Description: IC SRAM 4MBIT 55NS 32SOIC
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY62148ELL-55SXIT

• Memory Size: 4M (512K x 8)
• Format - Memory: RAM
• Memory Type: SRAM
• Speed: 55ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 32-SOIC (11.30mm Width)
• Memory Configuration: 512K X 8
• Access Time: 55ns
• Supply Voltage Range: 4.5V To 5.5V
• Memory Case Style: SOIC
• No. Of Pins: 32
• Operating Temperature Range: -40°C To +85°C
• Rohs Compliant: Yes
• Density: 4Mb
• Access Time (max): 55ns
• Sync/async: Asynchronous
• Architecture: Not Required
• Clock Freq (max): Not RequiredMHz
• Operating Supply Voltage (typ): 5V
• Address Bus: 19b
• Package Type: SOIC
• Operating Temp Range: -40C to 85C
• Number Of Ports: 1
• Supply Current: 20mA
• Operating Supply Voltage (min): 4.5V
• Operating Supply Voltage (max): 5.5V
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 32
• Word Size: 8b
• Number Of Words: 512K
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Capacitance
Thermal Resistance
Data Retention Characteristics
Over the operating range
Document #: 38-05442 Rev. *H
C
C
Θ
Θ
V
I
t
t
Notes
CCDR
CDR
R
Parameter
10. Tested initially and after any design or process changes that may affect these parameters.
11. Typical values are included for reference and are not guaranteed or tested. Typical values are measured at V
12. Chip enable (CE) must be HIGH at CMOS level to meet the I
13. Full device operation requires linear V
Parameter
DR
IN
OUT
JA
JC
Parameter
[13]
[12]
OUTPUT
INCLUDING
V
JIG AND
CC
[10]
[10]
SCOPE
V
Data retention current
Chip deselect to data retention time
Operation recovery time
Parameter
CC
30 pF
for data retention
Thermal resistance
(junction to ambient)
Thermal resistance
(junction to case)
Input capacitance
Output capacitance
R
V
R1
R2
TH
TH
R1
[10]
Description
Description
Description
CC
R2
ramp from V
Equivalent to:
Figure 2. AC Test Loads and Waveforms
OUTPUT
DR
T
V
Still air, soldered on a 3 × 4.5 inch,
two-layer printed circuit board
to V
A
CC
= 25 °C, f = 1 MHz,
SB2
CC
= V
Rise Time = 1 V/ns
V
V
(min) > 100 µs or stable at V
CC
IN
/ I
CC
THEVENIN
CCDR
= V
> V
(Typ)
3.0 V
DR
CC
spec. Other inputs can be left floating.
GND
Test Conditions
Test Conditions
, CE > V
5.0 V
1800
– 0.2 V or V
1.77
990
639
EQUIVALENT
R
TH
10%
CC
Conditions
– 0.2 V,
ALL INPUT PULSES
IN
CC
V
< 0.2 V
(min) > 100 µs.
90%
Automotive-A
CC
Industrial/
TSOP II
= V
SOIC
CC(typ)
Package
90%
SOIC
75
10
, T
10%
A
Max
Fall Time = 1 V/ns
CY62148E MoBL
10
10
= 25 °C.
Min
45
55
2
–
0
Unit
Package
TSOP II
Ω
Ω
Ω
V
Typ
77
13
–
1
–
–
–
[11]
Page 5 of 14
Max Unit
Unit
pF
pF
–
7
–
–
–
°C/W
°C/W
Unit
µA
ns
ns
ns
V
®
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