RC28F128M29EWLA NUMONYX, RC28F128M29EWLA Datasheet - Page 72

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RC28F128M29EWLA

Manufacturer Part Number
RC28F128M29EWLA
Description
IC FLASH 128MBIT 25NS 64BGA
Manufacturer
NUMONYX
Series
Axcell™r
Datasheet

Specifications of RC28F128M29EWLA

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
128M (16Mx8, 8Mx16)
Speed
60ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
64-BGA
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
RC28F128M29EWLA
Manufacturer:
Micron Technology Inc
Quantity:
10 000
DC and AC Parameters
Figure 25. Write Enable Controlled Program waveforms (16-bit mode)
1. Only the third and fourth cycles of the Program command are represented. The Program command is followed by the check
2. PA is the address of the memory location to be programmed. PD is the data to be programmed.
3. DQ7 is the complement of the data bit being programmed to DQ7 (see
4.
72
of Status Register Data Polling bit and by a read operation that outputs the data, DOUT, programmed by the previous
Program command.
SeeTable 24: Write AC characteristics, Write Enable
Controlled
and
DQ0-DQ15
A0-Amax
OE#
CE#
WE#
Table 23: Read AC characteristics (Sheet of 2)
tAVAV
tGHWL
tELWL
tWLWH
tDVWH
3rd cycle
tAVWL
555h
AOh
4th cycle
tWHEH
tWHDX
PA
Controlled,
208031-04
tWHWL
PD
tWLAX
for details on the timings.
Table 25: Write AC characteristics, Chip Enable
Data Polling
Section 7.2.1: Data Polling bit
PA
DQ7
D OUT
tAVAV
tGHQZ
Numonyx
Read cycle
D OUT
tELQV
tGLQV
(DQ7)).
®
Axcell™ M29EW
tAXQX
AI13699

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