CY14B256L-SZ35XC Cypress Semiconductor Corp, CY14B256L-SZ35XC Datasheet - Page 9

• Manufacturer Part Number: CY14B256L-SZ35XC
• Description: IC NVSRAM 256KBIT 35NS 32SOIC
• Manufacturer: Cypress Semiconductor Corp
• Type: NVSRAMr

Specifications of CY14B256L-SZ35XC

• Format - Memory: RAM
• Memory Type: NVSRAM (Non-Volatile SRAM)
• Memory Size: 256K (32K x 8)
• Speed: 35ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 32-SOIC (7.5mm Width)
• Word Size: 8b
• Organization: 32Kx8
• Density: 256Kb
• Interface Type: Parallel
• Access Time (max): 35ns
• Operating Supply Voltage (typ): 3.3V
• Package Type: SOIC
• Operating Temperature Classification: Commercial
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 2.7V
• Operating Temp Range: 0C to 70C
• Pin Count: 32
• Mounting: Surface Mount
• Supply Current: 55mA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 428-2032-5; CY14B256L-SZ35XC

Maximum Ratings
Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage temperature ................................ –65 °C to +150 °C
Maximum accumulated storage time:
Ambient temperature with power applied . –55 °C to +150 °C
Supply voltage on V
Voltage applied to outputs in
high-Z state.......................................... –0.5 V to V
Input voltage ...........................................–0.5 V to Vcc+0.5 V
Transient voltage (<20 ns) on
any pin to ground potential .................. –2.0 V to V
DC Electrical Characteristics
Over the Operating Range (V
Document Number: 001-54707 Rev. *F
V
I
I
I
I
I
I
I
V
V
V
V
V
Parameter
Notes
CC1
CC2
CC3
CC4
SB
IX
OZ
8. Typical values are at 25 °C, V
9. The HSB pin has I
CC
IH
IL
OH
OL
CAP
[9]
parameter is characterized but not tested.
At 150 °C ambient temperature........................ 1000 h
At 85 °C ambient temperature ...................... 20 years
Power supply
Average V
Average V
during STORE
Average V
t
V
Average V
during AutoStore cycle
V
Input leakage current
(except HSB)
Input leakage current
(for HSB)
Off-state output
leakage current
Input HIGH voltage
Input LOW voltage
Output HIGH voltage
Output LOW voltage
Storage capacitor
RC
CC
CC
= 200 ns,
(Typ), 25 °C
standby current
Description
OUT
CC
= -2 uA for V
CC
relative to V
CC
CC
CAP
current at
current
current
CC
current
= V
CC
OH
CC
= 2.7 V to 3.6 V)
of 2.4 V when both active high and low drivers are disabled. When they are enabled standard V
(Typ). Not 100% tested.
ss
.............–0.5 V to 4.1 V
t
t
Values obtained without output loads (I
All inputs don’t care, V
Average current for duration t
All inputs cycling at CMOS levels.
Values obtained without output loads (I
All inputs don’t Care. Average current for duration t
CE > (V
Standby current level after nonvolatile cycle is complete.
Inputs are static. f = 0 MHz.
V
V
V
I
I
Between V
RC
RC
OUT
OUT
CC
CC
CC
= 25 ns
= 45 ns
= Max, V
= Max, V
= Max, V
= –2 mA
= 4 mA
CC
CAP
– 0.2 V). V
CC
CC
SS
SS
SS
pin and V
< V
+ 0.5 V
+ 2.0 V
< V
< V
OUT
Test Conditions
IN
IN
IN
CC
< V
< V
< V
< 0.2 V or > (V
SS
= Max
CC
CC
CC
, rated 5 V
, CE or OE > V
STORE
Package power dissipation
capability (T
Surface mount Pb soldering
temperature (3 seconds) .......................................... +260 °C
DC output current (1 output at a time, 1s duration) ..... 15 mA
Static discharge voltage.......................................... > 2001 V
(per MIL-STD-883, Method 3015)
Latch up current..................................................... > 200 mA
Operating Range
Industrial
Range
OUT
OUT
CC
– 0.2 V).
A
IH
= 0 mA)
= 0 mA).
= 25 °C) .................................................. 1.0 W
or WE < V
Ambient Temperature
STORE
–40 °C to +85 °C
IL
V
ss
–100
Min
2.7
2.0
2.4
–1
–1
61
–
–
–
–
–
– 0.5
–
Typ
3.0
35
68
–
–
–
–
–
–
–
–
–
–
–
OH
CY14B256LA
[8]
and V
2.7 V to 3.6 V
V
OL
CC
Max
180
3.6
0.8
0.4
are valid. This
70
52
10
+1
+1
+1
V
Page 9 of 22
–
5
5
+ 0.5
CC
Unit
mA
mA
mA
mA
mA
mA
μA
μA
μA
μF
V
V
V
V
V
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