CAT25080HU2I-GT3 ON Semiconductor, CAT25080HU2I-GT3 Datasheet - Page 2

IC EEPROM 8KB SPI SER 8UDFN

CAT25080HU2I-GT3

Manufacturer Part Number
CAT25080HU2I-GT3
Description
IC EEPROM 8KB SPI SER 8UDFN
Manufacturer
ON Semiconductor
Datasheet

Specifications of CAT25080HU2I-GT3

Format - Memory
EEPROMs - Serial
Memory Type
EEPROM
Memory Size
8K (1K x 8)
Speed
10MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
1.8 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-UFDFN Exposed Pad
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CAT25080HU2I-GT3
Manufacturer:
ON Semiconductor
Quantity:
2 400
Part Number:
CAT25080HU2I-GT3
Manufacturer:
ON/安森美
Quantity:
20 000
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The DC input voltage on any pin should not be lower than −0.5 V or higher than V
2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC−Q100
3. Page Mode, V
Table 1. ABSOLUTE MAXIMUM RATINGS
Table 2. RELIABILITY CHARACTERISTICS
Table 3. D.C. OPERATING CHARACTERISTICS
Table 4. PIN CAPACITANCE
Symbol
Operating Temperature
Storage Temperature
Voltage on any Pin with Respect to Ground (Note 1)
N
Symbol
C
undershoot to no less than −1.5 V or overshoot to no more than V
and JEDEC test methods.
END
V
V
V
V
I
I
C
I
V
SB1
SB2
I
V
OUT
Symbol
OH1
OH2
CC
OL1
OL2
I
LO
IN
L
IH
IL
T
(Note 3)
DR
Supply Current
Standby Current
Standby Current
Input Leakage Current
Output Leakage
Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
Output Low Voltage
Output High Voltage
Output Capacitance (SO)
Input Capacitance (CS, SCK, SI, WP, HOLD)
CC
Parameter
Endurance
Data Retention
= 5 V, 25°C.
(Note 2) (T
Read, Write, V
SO open
V
WP = V
V
WP = GND, V
V
CS = V
V
V
V
V
V
Test
IN
IN
IN
OUT
CC
CC
CC
CC
= GND or V
= GND or V
= GND or V
Parameter
Parameters
> 2.5 V, I
> 2.5 V, I
> 1.8 V, I
> 1.8 V, I
A
= GND or V
CC
= 25°C, f = 1.0 MHz, V
CC
,
, V
(Note 2)
CC
OL
OH
OL
OH
CC
CC
CC
CC
CC
= 5.0 V
= 3.0 mA
= 150 mA
= −1.6 mA
= −100 mA
= 5.0 V
(
= 5.0 V,
CC
, CS = V
, CS = V
http://onsemi.com
V
CC
Test Conditions
= +1.8 V to +5.5 V, T
CC
CC
2
CC
,
,
CC
+ 1.5 V, for periods of less than 20 ns.
= +5.0 V)
10 MHz / −40°C to 85°C
5 MHz / −40°C to 125°C
T
T
T
T
A
A
A
A
= −40°C to +85°C
= −40°C to +125°C
= −40°C to +85°C
= −40°C to +125°C
Conditions
V
V
OUT
IN
CC
= 0 V
A
= 0 V
= −40°C to +125°C unless otherwise specified.)
+ 0.5 V. During transitions, the voltage on any pin may
1,000,000
Min
100
Min
V
V
CC
CC
0.7 V
−0.5 to V
−0.5
Min
−2
−1
−1
− 0.8 V
− 0.2 V
Typ
Program / Erase Cycles
−45 to +130
−65 to +150
CC
Ratings
CC
Units
Years
+ 0.5
V
Max
0.3 V
CC
8
8
Max
0.4
0.2
2
2
2
4
5
2
1
2
+ 0.5
CC
Units
Units
Units
pF
pF
°C
°C
V
mA
mA
mA
mA
mA
mA
mA
mA
V
V
V
V
V
V

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