IC EEPROM 64KBIT 200NS 28TSOP

AT28BV64B-20TI

Manufacturer Part NumberAT28BV64B-20TI
DescriptionIC EEPROM 64KBIT 200NS 28TSOP
ManufacturerAtmel
AT28BV64B-20TI datasheet
 


Specifications of AT28BV64B-20TI

Format - MemoryEEPROMs - ParallelMemory TypeEEPROM
Memory Size64K (8K x 8)Speed200ns
InterfaceParallelVoltage - Supply2.7 V ~ 3.6 V
Operating Temperature-40°C ~ 85°CPackage / Case28-TSOP
Lead Free Status / RoHS StatusContains lead / RoHS non-compliant  
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8. DC Characteristics
Symbol
Parameter
I
Input Load Current
LI
I
Output Leakage Current
LO
I
V
Standby Current CMOS
SB
CC
I
V
Active Current
CC
CC
V
Input Low Voltage
IL
V
Input High Voltage
IH
V
Output Low Voltage
OL
V
Output High Voltage
OH
9. AC Read Characteristics
Symbol
Parameter
t
Address to Output Delay
ACC
(1)
t
CE to Output Delay
CE
(2)
t
OE to Output Delay
OE
(3)(4)
t
CE or OE to Output Float
DF
t
Output Hold from OE, CE or Address, Whichever Occurred First
OH
10. AC Read Waveforms
Notes:
1. CE may be delayed up to t
2. OE may be delayed up to t
without impact on t
.
ACC
3. t
is specified from OE or CE whichever occurs first (C
DF
4. This parameter is characterized and is not 100% tested.
AT28BV64B
6
Condition
V
= 0V to V
+ 1V
IN
CC
V
= 0V to V
I/O
CC
CE = V
- 0.3V to V
CC
CC
f = 5 MHz; I
= 0 mA
OUT
I
= 1.6 mA
OL
I
= -100 µA
OH
(1)(2)(3)(4)
- t
after the address transition without impact on t
ACC
CE
- t
after the falling edge of CE without impact on t
CE
OE
= 5 pF).
L
Min
Max
10
10
+ 1V
50
15
0.6
2.0
0.45
2.0
AT28BV64B-20
Min
Max
200
200
0
80
0
55
0
.
ACC
or by t
- t
after an address change
CE
ACC
OE
Units
µA
µA
µA
mA
V
V
V
V
Units
ns
ns
ns
ns
ns
0299I–PEEPR–4/09