AT27BV512-12RI Atmel, AT27BV512-12RI Datasheet - Page 7

• Manufacturer Part Number: AT27BV512-12RI
• Description: IC OTP 512KBIT 120NS 28SOIC
• Manufacturer: Atmel

Specifications of AT27BV512-12RI

• Format - Memory: EPROMs
• Memory Type: OTP EPROM
• Memory Size: 512K (64K x 8)
• Speed: 120ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V, 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 28-SOIC (8.69mm width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: AT27BV51212RI

Programming Waveforms
Notes:
DC Programming Characteristics
T
Symbol
I
V
V
V
V
I
I
V
A
LI
CC2
PP2
OL
OH
IL
IH
ID
= 25
1.
2.
3.
5°C, V
The Input Timing Reference is 0.8V for V
t
When programming the AT27BV512, a 0.1 F capacitor is required across V
transients.
OE
Parameter
Input Load Current
Input Low Level
Input High Level
Output Low Voltage
Output High Voltage
V
OE/V
A9 Product Identification Voltage
CC
and t
CC
Supply Current (Program and Verify)
PP
= 6.5
DFP
Current
are characteristics of the device but must be accommodated by the programmer.
0.25V, OE/V
(1)
PP
= 13.0
IL
and 2.0V for V
0.25V
Test Conditions
V
I
I
CE = V
OL
OH
IN
= 2.1 mA
= -400
= V
IL
IL
, V
IH
IH
.
A
PP
and ground to suppress spurious voltage
11.5
Min
-0.6
2.0
2.4
Limits
V
CC
Max
12.5
0.8
0.4
25
25
10
+ 0.5
Units
mA
mA
V
V
V
V
V
A
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