AT28BV16-30TC Atmel, AT28BV16-30TC Datasheet - Page 5

IC EEPROM 16KBIT 300NS 28TSOP

AT28BV16-30TC

Manufacturer Part Number
AT28BV16-30TC
Description
IC EEPROM 16KBIT 300NS 28TSOP
Manufacturer
Atmel
Datasheet

Specifications of AT28BV16-30TC

Format - Memory
EEPROMs - Parallel
Memory Type
EEPROM
Memory Size
16K (2K x 8)
Speed
300ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
28-TSOP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
AT28BV1630TC
AC Read Characteristics
AC Read Waveforms
Notes:
Input Test Waveforms and
Measurement Level
Pin Capacitance
f = 1 MHz, T = 25°C
Note:
Symbol
t
t
t
t
t
Symbol
C
C
ACC
CE
OE
DF
OH
t
IN
OUT
R
(1)
(3)(4)
(2)
, t
F
< 20 ns
1. CE may be delayed up to t
2. OE may be delayed up to t
3. t
4. This parameter is characterized and is not 100% tested.
1. This parameter is characterized and is not 100% tested.
without impact on t
DF
Parameter
Address to Output Delay
CE to Output Delay
OE to Output Delay
CE or OE High to Output Float
Output Hold from OE, CE or Address, whichever
occurred first
is specified from OE or CE whichever occurs first (C
(1)
Typ
4
8
ACC
(1)(2)(3)(4)
.
ACC
CE
- t
- t
OE
CE
after the falling edge of CE without impact on t
after the address transition without impact on t
Max
12
6
L
= 5 pF).
Output Test Load
Min
AT28BV16-25
0
0
Units
pF
pF
Max
250
250
100
55
CE
ACC
or by t
.
ACC
Min
AT28BV16-30
0
0
- t
OE
after an address change
Max
Conditions
300
300
100
55
V
V
OUT
IN
= 0V
= 0V
Units
ns
ns
ns
ns
ns
5

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