AT45DB011-JC Atmel, AT45DB011-JC Datasheet - Page 2

• Manufacturer Part Number: AT45DB011-JC
• Description: IC FLASH 1MBIT 13MHZ 32PLCC
• Manufacturer: Atmel

Specifications of AT45DB011-JC

• Format - Memory: FLASH
• Memory Type: DataFLASH
• Memory Size: 1M (512 pages x 264 bytes)
• Speed: 13MHz
• Interface: SPI, 3-Wire Serial
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 32-PLCC
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: AT45DB011JC

uses a serial interface to sequentially access its data. The
simple serial interface facilitates hardware layout,
increases system reliability, minimizes switching noise, and
reduces package size and active pin count. The device is
optimized for use in many commercial and industrial appli-
cations where high density, low pin count, low voltage, and
low power are essential. Typical applications for the
DataFlash are digital voice storage, image storage, and
data storage. The device operates at clock frequencies up
to 13 MHz with a typical active read current consumption of
4 mA.
Block Diagram
Memory Array
To provide optimal flexibility, the memory array of the
AT45DB011 is divided into three levels of granularity com-
prising of sectors, blocks, and pages. The Memory
Architecture Diagram illustrates the breakdown of each
2
RDY/BUSY
RESET
GND
AT45DB011
VCC
SCK
WP
CS
PAGE (264 BYTES)
SI
BUFFER (264 BYTES)
FLASH MEMORY ARRAY
I/O INTERFACE
To allow for simple in-system reprogrammability, the
AT45DB011 does not require high input voltages for pro-
gramming. The device operates from a single power
supply, 2.7V to 3.6V, for both the program and read opera-
tions. The AT45DB011 is enabled through the chip select
pin (CS) and accessed via a three-wire interface consisting
of the Serial Input (SI), Serial Output (SO), and the Serial
Clock (SCK).
All programming cycles are self-timed, and no separate
erase cycle is required before programming.
level and details the number of pages per sector and block.
All program operations to the DataFlash occur on a page
by page basis; however, the optional erase operations can
be performed at the block or page level.
SO