CY7C09289V-6AXC Cypress Semiconductor Corp, CY7C09289V-6AXC Datasheet - Page 8

• Manufacturer Part Number: CY7C09289V-6AXC
• Description: IC SRAM 1MBIT 6.5NS 100LQFP
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C09289V-6AXC

• Format - Memory: RAM
• Memory Type: SRAM - Dual Port, Synchronous
• Memory Size: 1M (64K x 16)
• Speed: 6.5ns
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 100-LQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Switching Waveforms
Notes
Document #: 38-06056 Rev. *C
17. OE is asynchronously controlled; all other inputs are synchronous to the rising clock edge.
18. ADS = V
19. The output is disabled (high impedance state) by CE
20. Addresses do not have to be accessed sequentially since ADS = V
ADDRESS
ADDRESS
DATA
DATA
IL
CLK
R/W
CLK
R/W
, CNTEN and CNTRST = V
CE
CE
CE
CE
OUT
OUT
OE
OE
0
1
0
1
t
t
t
t
t
t
SC
SW
SA
SC
SW
SA
Figure 5. Read Cycle for Flow Through Output (FT/PIPE = V
A
A
Figure 6. Read Cycle for Pipelined Operation (FT/PIPE = V
n
n
t
t
t
t
t
t
t
HC
HW
HA
t
HC
HW
HA
IH
CH1
t
CH2
CKLZ
1 Latency
.
t
CD1
t
t
CYC1
CYC2
t
CKLZ
0
t
t
CL1
CL2
=V
IH
or CE
A
A
n+1
n+1
1
t
Q
DC
= V
IL
n
t
constantly loads the address on the rising edge of the CLK. Numbers are for reference only.
CD2
IL
following the next rising edge of the clock.
Q
A
A
n
n+2
n+2
Q
t
OHZ
n+1
t
DC
IH
IL
)
)
[17, 18, 19, 20]
t
t
Q
[17, 18, 19, 20]
SC
OE
t
CY7C09269V/79V/89V
CY7C09369V/79V/89V
t
SC
OLZ
n+1
t
OHZ
A
A
n+3
n+3
t
Q
OLZ
t
DC
n+2
t
t
HC
HC
t
t
OE
CKHZ
Page 8 of 19
Q
n+2
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