M58BW16FB4ZA3T NUMONYX, M58BW16FB4ZA3T Datasheet - Page 70

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M58BW16FB4ZA3T

Manufacturer Part Number
M58BW16FB4ZA3T
Description
IC FLASH 16MBIT 45NS 80LBGA
Manufacturer
NUMONYX
Datasheet

Specifications of M58BW16FB4ZA3T

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
16M (512K x 32)
Speed
45ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 125°C
Package / Case
80-LBGA
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
M58BW16FB4ZA3TCT

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M58BW16FB4ZA3T
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Figure 28. Block Erase flowchart and pseudocode
1. If an error is found, the Status Register must be cleared before further Program/Erase operations.
70/87
Write Block Address
Read Status
b4 and b5
Write 20h
Register
& D0h
b7 = 1
b3 = 0
b5 = 0
b1 = 0
Start
End
= 1
YES
YES
NO
YES
YES
NO
NO
YES
NO
NO
Suspend
Erase to Protected
Sequence Error
PEN Invalid
Block Error
Command
NO
Error (1)
Error (1)
Erase
YES
Suspend
Loop
Erase command:
– write 20h, Address 55h
– write Block Address
(memory enters read status
state after the Erase command)
do:
– read status register
if Erase command given execute
suspend erase loop
while b7 = 1
If b3 = 1, PEN invalid error:
– error handler
If b4, b5 = 1, Command Sequence error:
– error handler
If b5 = 1, Erase error:
– error handler
If b1 = 1, Erase to Protected Block Error:
– error handler
(A11-A19) & D0h
(E or G must be toggled)
AI08623d

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