CY7C1270V18-375BZXC Cypress Semiconductor Corp, CY7C1270V18-375BZXC Datasheet

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CY7C1270V18-375BZXC

Manufacturer Part Number
CY7C1270V18-375BZXC
Description
IC SRAM 36MBIT 375MHZ 165TFBGA
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY7C1270V18-375BZXC

Format - Memory
RAM
Memory Type
SRAM - Synchronous, DDR II
Memory Size
36M (1M x 36)
Speed
375MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 70°C
Package / Case
165-TFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY7C1270V18-375BZXC
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Features
Configurations
With Read Cycle Latency of 2.5 cycles:
CY7C1266V18 – 4M x 8
CY7C1277V18 – 4M x 9
CY7C1268V18 – 2M x 18
CY7C1270V18 – 1M x 36
Selection Guide
Note
Cypress Semiconductor Corporation
Document Number: 001-06347 Rev. *D
Maximum Operating Frequency
Maximum Operating Current
1. The QDR consortium specification for V
36-Mbit density (4M x 8, 4M x 9, 2M x 18, 1M x 36)
300 MHz to 400 MHz clock for high bandwidth
2-Word burst for reducing address bus frequency
Double Data Rate (DDR) interfaces
(data transferred at 800 MHz) at 400 MHz
Read latency of 2.5 clock cycles
Two input clocks (K and K) for precise DDR timing
Echo clocks (CQ and CQ) simplify data capture in high speed
systems
Data valid pin (QVLD) to indicate valid data on the output
Synchronous internally self-timed writes
Core V
HSTL inputs and variable drive HSTL output buffers
Available in 165-ball FBGA package (15 x 17 x 1.4 mm)
Offered in both in Pb-free and non Pb-free packages
JTAG 1149.1 compatible test access port
Delay Lock Loop (DLL) for accurate data placement
V
SRAM uses rising edges only
DDQ
= 1.4V to V
DD
= 1.8V ± 0.1V; IO V
Description
DD
.
DDQ
DDQ
= 1.4V to V
is 1.5V + 0.1V. The Cypress QDR devices exceed the QDR consortium specification and are capable of supporting
400 MHz
1280
400
DD
198 Champion Court
[1]
Burst Architecture (2.5 Cycle Read Latency)
375 MHz
1210
375
Functional Description
The CY7C1266V18, CY7C1277V18, CY7C1268V18, and
CY7C1270V18 are 1.8V Synchronous Pipelined SRAMs
equipped with DDR-II+ architecture. The DDR-II+ consists of an
SRAM core with advanced synchronous peripheral circuitry.
Addresses for read and write are latched on alternate rising
edges of the input (K) clock. Write data is registered on the rising
edges of both K and K. Read data is driven on the rising edges
of both K and K. Each address location is associated with two
8-bit words (CY7C1266V18), 9-bit words (CY7C1277V18),
18-bit words (CY7C1268V18), or 36-bit words (CY7C1270V18),
that burst sequentially into or out of the device.
Asynchronous inputs include output impedance matching input
(ZQ). Synchronous data outputs (Q, sharing the same physical
pins as the data inputs, D) are tightly matched to the two output
echo clocks CQ/CQ, eliminating the need to capture data
separately from each individual DDR SRAM in the system
design.
All synchronous inputs pass through input registers controlled by
the K or K input clocks. All data outputs pass through output
registers controlled by the K or K input clocks. Writes are
conducted with on-chip synchronous self-timed write circuitry.
36-Mbit DDR-II+ SRAM 2-Word
San Jose
333 MHz
CY7C1266V18, CY7C1277V18
CY7C1268V18, CY7C1270V18
1080
333
,
CA 95134-1709
300 MHz
1000
300
Revised March 11, 2008
408-943-2600
MHz
Unit
mA
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Related parts for CY7C1270V18-375BZXC

CY7C1270V18-375BZXC Summary of contents

Page 1

... K and K. Read data is driven on the rising edges of both K and K. Each address location is associated with two 8-bit words (CY7C1266V18), 9-bit words (CY7C1277V18), 18-bit words (CY7C1268V18), or 36-bit words (CY7C1270V18), that burst sequentially into or out of the device. Asynchronous inputs include output impedance matching input (ZQ) ...

Page 2

... Logic Block Diagram (CY7C1277V18 (20:0) Address Register LD K CLK K Gen. DOFF V REF Control R/W Logic BWS [0] Document Number: 001-06347 Rev. *D CY7C1266V18, CY7C1277V18 CY7C1268V18, CY7C1270V18 Write Write Reg Reg Output Logic Control Read Data Reg Reg. Reg. 8 Reg. Write Write Reg Reg Output Logic Control Read Data Reg ...

Page 3

... Logic Block Diagram (CY7C1268V18 (19:0) Address Register LD K CLK K Gen. DOFF V REF Control R/W Logic BWS [1:0] Logic Block Diagram (CY7C1270V18 (18:0) Address Register LD K CLK K Gen. DOFF V REF Control R/W Logic BWS [3:0] Document Number: 001-06347 Rev. *D CY7C1266V18, CY7C1277V18 CY7C1268V18, CY7C1270V18 ...

Page 4

... NC NC DQ5 DOFF REF DDQ DQ6 DQ7 R TDO TCK NC/72M DQ4 DQ5 DOFF REF DDQ DQ6 DQ7 R TDO TCK A Document Number: 001-06347 Rev. *D CY7C1266V18, CY7C1277V18 CY7C1268V18, CY7C1270V18 CY7C1266V18 ( NC/144M R/W NWS NC/288M K NWS DDQ DDQ DDQ DDQ DDQ DDQ DDQ QVLD ...

Page 5

... DQ26 R TDO TCK A Document Number: 001-06347 Rev. *D CY7C1266V18, CY7C1277V18 CY7C1268V18, CY7C1270V18 CY7C1268V18 ( NC/144M R/W BWS NC/288M K BWS DDQ DDQ DDQ DDQ DDQ DDQ DDQ QVLD CY7C1270V18 ( R/W BWS K BWS BWS BWS DDQ DDQ DDQ DDQ DDQ DDQ DDQ QVLD ...

Page 6

... These address inputs are multiplexed for both read and write operations. Internally, the device is organized arrays each for CY7C1266V18 arrays each for CY7C1277V18 arrays each 18) for CY7C1268V18, and arrays each of 512K x 36) for CY7C1270V18. R/W Input- Synchronous Read/Write Input. When LD is LOW, this input designates the access type (Read Synchronous when R/W is HIGH, Write when R/W is LOW) for loaded address ...

Page 7

... Power Supply Power Supply Inputs to the Core of the Device Ground Ground for the Device Power Supply Power Supply Inputs for the Outputs of the Device. DDQ Document Number: 001-06347 Rev. *D CY7C1266V18, CY7C1277V18 CY7C1268V18, CY7C1270V18 Pin Description output impedance are set to 0.2 x RQ, where [x:0] Page [+] Feedback [+] Feedback ...

Page 8

... Functional Overview The CY7C1266V18, CY7C1277V18, CY7C1268V18, and CY7C1270V18 are synchronous pipelined Burst SRAMs equipped with a DDR interface. Accesses for both ports are initiated on the Positive Input Clock (K). All synchronous input and output timing refer to the rising edge of the input clocks (K and K). ...

Page 9

... Source CLK Source CLK Echo Clock1/Echo Clock1 Echo Clock2/Echo Clock2 Truth Table The truth table for CY7C1266V18, CY7C1277V18, CY7C1268V18, and CY7C1270V18 follows. Operation Write Cycle: Load address; wait one cycle; input write data on consecutive K and K rising edges. Read Cycle: (2.5 cycle Latency) Load address ...

Page 10

... Assumes a write cycle was initiated per the Write Cycle Descriptions of a write cycle, as long as the setup and hold requirements are met. Document Number: 001-06347 Rev. *D CY7C1266V18, CY7C1277V18 CY7C1268V18, CY7C1270V18 [2, 8] Comments ) are written into the device. [7:0] ) are written into the device. ...

Page 11

... Write Cycle Descriptions The write cycle description table for CY7C1270V18 follows. BWS BWS BWS BWS L – L – L – L – L – L – Document Number: 001-06347 Rev. *D CY7C1266V18, CY7C1277V18 CY7C1268V18, CY7C1270V18 [ Comments – During the data portion of a write sequence, all four bytes (D into the device ...

Page 12

... TDO. During this state, instructions are shifted through the instruction register through the TDI and TDO pins. To execute the instruction after it is shifted in, the TAP controller must be moved into the Update-IR state. CY7C1266V18, CY7C1277V18 CY7C1268V18, CY7C1270V18 “TAP Controller Block Diagram” when the BYPASS SS shows the order in which the “ ...

Page 13

... TAP into the Shift-DR state. This places the boundary scan register between the TDI and TDO pins. Document Number: 001-06347 Rev. *D CY7C1266V18, CY7C1277V18 CY7C1268V18, CY7C1270V18 PRELOAD places an initial data pattern at the latched parallel outputs of the boundary scan register cells before the selection of another boundary scan test operation. ...

Page 14

... The state diagram for the TAP controller follows. TEST-LOGIC 1 RESET 0 1 TEST-LOGIC/ 0 IDLE Note 9. The 0/1 next to each state represents the value at TMS at the rising edge of TCK. Document Number: 001-06347 Rev. *D CY7C1266V18, CY7C1277V18 CY7C1268V18, CY7C1270V18 [9] 1 SELECT DR-SCAN 0 1 CAPTURE-DR 0 SHIFT- ...

Page 15

... These characteristics apply to the TAP inputs (TMS, TCK, TDI and TDO). Parallel load levels are specified in 11. Overshoot: V (AC) < 0.3V (pulse width less than t IH DDQ 12. All voltage refers to ground. Document Number: 001-06347 Rev. *D CY7C1266V18, CY7C1277V18 CY7C1268V18, CY7C1270V18 0 Bypass Register Instruction Register ...

Page 16

... CH 14. Test conditions are specified using the load in TAP AC Test Conditions. t Document Number: 001-06347 Rev. *D Description [14] Figure 2. TAP Timing and Test Conditions 50Ω 1. TMSH t TMSS t TDIS t TDIH t TDOV / ns CY7C1266V18, CY7C1277V18 CY7C1268V18, CY7C1270V18 Min Max Unit MHz ALL INPUT PULSES 0.9V t TCYC ...

Page 17

... SAMPLE Z 010 RESERVED 011 SAMPLE/PRELOAD 100 RESERVED 101 RESERVED 110 BYPASS 111 Document Number: 001-06347 Rev. *D CY7C1266V18, CY7C1277V18 CY7C1268V18, CY7C1270V18 Value CY7C1277V18 CY7C1268V18 000 000 11010111000001111 11010111000010111 00000110100 00000110100 1 1 Description Captures the input/output ring contents. Loads the ID register with the vendor ID code and places the register between TDI and TDO ...

Page 18

... Document Number: 001-06347 Rev. *D CY7C1266V18, CY7C1277V18 CY7C1268V18, CY7C1270V18 Bump ID Bit # Bump ID 10G 11F 58 5A 11G 10F 61 4B 11E 62 3A 10E 63 2A 10D 10C 66 3B 11D ...

Page 19

... Clock Start (Clock Starts after DDQ is Stable DDQ DDQ Stable (< + 0.1V DC per 50 ns) DOFF Document Number: 001-06347 Rev. *D CY7C1266V18, CY7C1277V18 CY7C1268V18, CY7C1270V18 DLL Constraints ■ DLL uses K clock as its synchronizing input. The input must have low phase jitter, which is specified as t ■ ...

Page 20

... MHz Test Conditions (min) within 200 ms. During this time V < V and /2)/(RQ/5) for values of 175Ω < RQ < 350Ω. (max) = 0.95V or 0.54V , whichever is smaller. REF DDQ CY7C1266V18, CY7C1277V18 CY7C1268V18, CY7C1270V18 Ambient [15] [15 DDQ 1.8 ± 0.1V 1. Min Typ Max Unit 1 ...

Page 21

... R = 50Ω REF OUTPUT Device 0.25V 5 pF Under ZQ Test RQ = 250Ω INCLUDING JIG AND (b) SCOPE /I and load capacitance shown in ( CY7C1266V18, CY7C1277V18 CY7C1268V18, CY7C1270V18 Max Unit 165 FBGA Unit Package °C/W 16.25 °C/W 2.91 [21] ALL INPUT PULSES 1.25V 0.75V Slew Rate = 2 V/ns = 0.75V 250Ω ...

Page 22

... CHZ 27. t spec is applicable for both rising and falling edges of QVLD signal. QVLD 28. Hold to >V or < Document Number: 001-06347 Rev. *D CY7C1266V18, CY7C1277V18 CY7C1268V18, CY7C1270V18 400 MHz Description Min Max Min Max Min Max Min Max [23] 1 – 2.50 8.4 0.4 – ...

Page 23

... NOP WRITE QVLD Q01 Q10 Q11 Q00 D20 D21 t DOH t t CLZ CHZ CQD t t CCQO CQDOH t CQOH t CCQO t CQOH CY7C1266V18, CY7C1277V18 CY7C1268V18, CY7C1270V18 WRITE READ NOP NOP QVLD D30 D31 Q40 t CQH t CQHCQH DON’T CARE UNDEFINED Page [+] Feedback [+] Feedback ...

Page 24

... Fine Pitch Ball Grid Array ( 1.4 mm) CY7C1277V18-375BZC CY7C1268V18-375BZC CY7C1270V18-375BZC CY7C1266V18-375BZXC 51-85195 165-ball Fine Pitch Ball Grid Array ( 1.4 mm) Pb-Free CY7C1277V18-375BZXC CY7C1268V18-375BZXC CY7C1270V18-375BZXC CY7C1266V18-375BZI 51-85195 165-ball Fine Pitch Ball Grid Array ( 1.4 mm) CY7C1277V18-375BZI CY7C1268V18-375BZI CY7C1270V18-375BZI CY7C1266V18-375BZXI 51-85195 165-ball Fine Pitch Ball Grid Array ( 1.4 mm) Pb-Free ...

Page 25

... Fine Pitch Ball Grid Array ( 1.4 mm) CY7C1277V18-300BZI CY7C1268V18-300BZI CY7C1270V18-300BZI CY7C1266V18-300BZXI 51-85195 165-ball Fine Pitch Ball Grid Array ( 1.4 mm) Pb-Free CY7C1277V18-300BZXI CY7C1268V18-300BZXI CY7C1270V18-300BZXI Document Number: 001-06347 Rev. *D CY7C1266V18, CY7C1277V18 CY7C1268V18, CY7C1270V18 Package Type Commercial Commercial Operating Range Industrial Industrial Page [+] Feedback [+] Feedback ...

Page 26

... Package Diagram Figure 6. 165-ball FBGA ( 1.40 mm), 51-85195 Document Number: 001-06347 Rev. *D CY7C1266V18, CY7C1277V18 CY7C1268V18, CY7C1270V18 51-85195-*A Page [+] Feedback [+] Feedback ...

Page 27

... Document History Page Document Title: CY7C1266V18/CY7C1277V18/CY7C1268V18/CY7C1270V18, 36-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) Document Number: 001-06347 REV. ECN No. Issue Date ** 425689 See ECN *A 461639 See ECN *B 497628 See ECN *C 1093183 See ECN *D 2198506 See ECN VKN/AESA Added footnote# 19 related to I © ...

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