CY7C1270V18-375BZXC Cypress Semiconductor Corp, CY7C1270V18-375BZXC Datasheet - Page 27

• Manufacturer Part Number: CY7C1270V18-375BZXC
• Description: IC SRAM 36MBIT 375MHZ 165TFBGA
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1270V18-375BZXC

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous, DDR II
• Memory Size: 36M (1M x 36)
• Speed: 375MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 165-TFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document History Page
© Cypress Semiconductor Corporation, 2006-2008. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of
any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for
medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as
critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems
application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.
Any Source Code (software and/or firmware) is owned by Cypress Semiconductor Corporation (Cypress) and is protected by and subject to worldwide patent protection (United States and foreign),
United States copyright laws and international treaty provisions. Cypress hereby grants to licensee a personal, non-exclusive, non-transferable license to copy, use, modify, create derivative works of,
and compile the Cypress Source Code and derivative works for the sole purpose of creating custom software and or firmware in support of licensee product to be used only in conjunction with a Cypress
integrated circuit as specified in the applicable agreement. Any reproduction, modification, translation, compilation, or representation of this Source Code except as specified above is prohibited without
the express written permission of Cypress.
Disclaimer: CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS MATERIAL, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES
OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Cypress reserves the right to make changes without further notice to the materials described herein. Cypress does not
assume any liability arising out of the application or use of any product or circuit described herein. Cypress does not authorize its products for use as critical components in life-support systems where
a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress’ product in a life-support systems application implies that the manufacturer
assumes all risk of such use and in doing so indemnifies Cypress against all charges.
Use may be limited by and subject to the applicable Cypress software license agreement.
Document Number: 001-06347 Rev. *D
All product and company names mentioned in this document are the trademarks of their respective holders.
Document Title: CY7C1266V18/CY7C1277V18/CY7C1268V18/CY7C1270V18, 36-Mbit DDR-II+ SRAM 2-Word
Burst Architecture (2.5 Cycle Read Latency)
Document Number: 001-06347
REV.
*A
*B
*C
*D
**
ECN No.
1093183
2198506
425689
461639
497628
Issue Date
See ECN
See ECN
See ECN
See ECN
See ECN
VKN/AESA Added footnote# 19 related to I
Orig. of
Change
NXR
NXR
NXR
VKN
New Data Sheet
Revised the MPN’s from
CY7C1277AV18 to CY7C1277V18
CY7C1268AV18 to CY7C1268V18
CY7C1270AV18 to CY7C1270V18
Changed t
t
AC Switching Characteristics table
Modified Power-Up waveform
Changed the V
in Operating Range table and in the DC Electrical Characteristics table
Added foot note in page# 1
Changed the Maximum rating of Ambient Temperature with Power Applied
from –10°C to +85°C to –55°C to +125°C
Changed V
Characteristics table and in the note below the table
Updated foot note# 17 to specify Overshoot and Undershoot Spec
Updated Θ
Removed x9 part and its related information
Updated footnote #24
Converted from preliminary to final
Added x8 and x9 parts
Updated logic block diagram for x18 and x36 parts
Changed I
1210 mA for 375 MHz, 880 mA to 1080 mA for 333 MHz, 830 mA to 1000
mA for 300 MHz
Changed I
mA for 333 MHz, 250 mA to 290 mA for 300 MHz
Changed Θ
Changed t
Updated Ordering Information table
TDIH
, t
CH
Revised March 11, 2008
from 10 ns to 5 ns and changed t
TH
SB
DD
CYC
JA
REF
JA
and t
and Θ
values from 300 mA to 320 mA for 375 MHz, 275 mA to 300
values from 1080 mA to 1280 mA for 400 MHz, 980 mA to
value from 12.43 °C/W to 16.25 °C/W
DDQ
max spec to 8.4 ns for all speed bins
(Max.) spec from 0.85V to 0.95V in the DC Electrical
TL
operating voltage to 1.4V to V
JC
from 40 ns to 20 ns, changed t
values
Description of Change
CY7C1266V18, CY7C1277V18
CY7C1268V18, CY7C1270V18
DD
TDOV
from 20 ns to 10 ns in TAP
DD
TMSS
in the Features section,
, t
TDIS
, t
CS
Page 27 of 27
, t
TMSH
,
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