IDT71V124SA15Y IDT, Integrated Device Technology Inc, IDT71V124SA15Y Datasheet - Page 2

• Manufacturer Part Number: IDT71V124SA15Y
• Description: IC SRAM 1MBIT 15NS 32SOJ
• Manufacturer: IDT, Integrated Device Technology Inc

Specifications of IDT71V124SA15Y

• Format - Memory: RAM
• Memory Type: SRAM
• Memory Size: 1M (128K x 8)
• Speed: 15ns
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 32-SOJ
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 71V124SA15Y

Truth Table
NOTE:
1. H = V
Capacitance
Pin Configuration
NOTE:
1. This parameter is guaranteed by device characterization, but is not production tested.
DC Electrical Characteristics
(V
(T
Symbol
IDT71V124SA, 3.3V CMOS Static RAM
1 Meg (128K x 8-Bit) Center Power & Ground Pinout
Symbol
CS
DD
H
L
L
L
V
A
C
C
|I
V
|I
LO
OH
OL
IN
I/O
LI
|
= +25°C, f = 1.0MHz, SOJ package)
|
IH
= Min. to Max., Commercial and Industrial Temperature Ranges)
, L = V
OE
Input Capacitance
I/O Capacitance
Input Leakage Current
Output Leakage Current
Output Low Voltage
Output High Voltage
X
H
X
L
IL
, X = Don't care.
GND
Parameter
V
I/O
I/O
I/O
I/O
WE
WE
CS
DD
A
A
A
A
A
A
A
A
H
H
X
L
0
1
2
3
0
1
2
3
4
5
6
7
Parameter
(1)
SOJ and TSOP
DATA
(1)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
Top View
DATA
High-Z
High-Z
I/O
SO32-2
SO32-3
SO32-4
OUT
IN
Read Data
Write Data
Output Disabled
Deselected – Standby
V
Conditions
V
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
OUT
IN
3873 drw 02
= 3dV
= 3dV
I
I
V
V
OL
OH
DD
DD
Function
A
A
A
A
OE
I/O
I/O
GND
V
I/O
I/O
A
A
A
A
A
= 8mA, V
= –4mA, V
16
15
14
13
DD
12
11
10
9
8
= Max., V
= Max.,CS
7
6
5
4
.
Max.
6
7
DD
IN =
DD
3873 tbl 01
=
= Min.
3873 tbl 03
V
= Min.
GND to V
IH
Unit
pF
pF
, V
OUT =
2
Test Conditions
DD
Absolute Maximum Ratings
NOTE:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
Recommended Operating Tempera-
ture and Supply Voltage
Recommended DC Operating
Conditions
NOTES:
1. For 71V124SA10 only.
2. For all speed grades except 71V124SA10.
3. V
4. V
GND to V
Symbol
V
V
V
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliabilty.
Symbol
Commercial
V
V
V
DD
DD
IN
IH
IL
T
T
Industrial
SS
IH
V
I
IL
, V
BIAS
OUT
T
P
STG
Grade
(min.) = –2V for pulse width less than 5ns, once per cycle.
(1)
(2)
(max.) = V
DD
A
T
OUT
DD
Supply Voltage
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
DD
Supply Voltage Relative
Commercial
Operating Temperature
Industrial
Operating Temperature
Storage Temperature
Power Dissipation
DC Output Current
to GND
Terminal Voltage Relative
to GND
Temperature Under Bias
+2V for pulse width less than 5ns, once per cycle.
Commercial and Industrial Temperature Ranges
Parameter
-40°C to +85°C
Temperature
0°C to +70°C
Rating
–0.5
Min.
3.15
3.0
2.0
0
(1)
Min.
2.4
-0.5 to V
___
___
___
Typ.
GND
3.3
3.3
____
____
0V
0V
-0.5 to +4.6
-55 to +125
-55 to +125
-40 to +85
0
-0 to +70
Value
1.25
50
V
DD
(1)
DD
Max.
+0.5
Max.
3.6
3.6
0.8
0.4
+0.3
___
0
5
5
See Below
See Below
(3)
V
3873 tbl 05
DD
3873 tbl 04
3873 t b l 02a
3873 tbl 02
Unit
mA
Unit
Unit
o
o
o
W
V
V
µA
µA
C
C
C
V
V
V
V
V
V
V