TC58FVB160FT-85 Toshiba, TC58FVB160FT-85 Datasheet - Page 6

• Manufacturer Part Number: TC58FVB160FT-85
• Description: IC FLASH 16MBIT 85NS 48TSOP
• Manufacturer: Toshiba

Specifications of TC58FVB160FT-85

• Format - Memory: FLASH
• Memory Type: FLASH - Nor
• Memory Size: 16M (2M x 8 or 1M x 16)
• Speed: 85ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

OPERATION MODES
block protection and data polling. When incorporating the device into a design, please refer to the timing charts and
flowcharts in combination with the description below.
In addition to the Read, Write and Erase Modes, the TC58FVT160/B160A features many functions, including
READ MODE
high-speed random access as an asynchronous ROM.
operation. A software reset releases ID Read Mode and the lock state which the device enters if automatic
operation ends abnormally, and sets the device to Read Mode. A hardware reset terminates operation of the
device and resets it to Read Mode. When reading data without changing the address immediately after power-on,
either input a hardware Reset command or change CE from H to L.
ID Read Mode
EPROM programmers to identify the device type automatically.
(1) Applying V
(2) Input command sequence
Standby Mode
(1) Control using CE and RESET
(2) Control using RESET only
Auto-Sleep Mode
device will automatically enter Sleep Mode and the current will be reduced to the standby current (I
Because the output data is latched, data is output in Sleep Mode. When the address is changed, Sleep Mode is
automatically released, and data from the new address is output.
To read data from the memory cell array, set the device to Read Mode. In Read Mode, the device can perform
The device is automatically set to Read Mode immediately after power-on or on completion of automatic
ID Read Mode is used to read the device maker code and device code. The mode is useful in that it allows
ID read can be executed in two ways, as follows:
There are two ways to put the device into Standby Mode.
This function suppresses power dissipation during reading. If the address input does not change for 150 ns, the
outputting the maker code from address 00H and the device code from address 01H. Releasing V
returns the device to Read Mode.
00; the device code is output from address 01. Inputting a Reset command releases ID Read Mode and
returns the device to Read Mode.
Table.
Mode and the current will be reduced to the standby current (I
current will be reduced to the standby current (I
This method is used mainly by EPROM programmers. Applying V
Inputting an ID Read command sets the device to ID Read Mode. The maker code is output from address
Access time in ID Read Mode is the same as that in Read Mode. For a list of the codes, refer to the ID Code
With the device in Read Mode, input V
With the device in Read Mode, input V
In Standby Mode DQ is put in the High-Impedance state.
ID
to A9
SS
DD
± 0.3 V to RESET . The device will enter Standby Mode and the
± 0.3 V to CE and RESET . The device will enter Standby
DDS1
).
TC58FVT160/B160AFT/AXB-70,-10
DDS1
ID
).
to A9 sets the device to ID Read Mode,
2004-09-01 6/42
ID
from A9
DDS2
).