TC58DVG02A1FT Toshiba, TC58DVG02A1FT Datasheet - Page 30

• Manufacturer Part Number: TC58DVG02A1FT
• Description: IC FLASH 1GBIT 50NS 48TSOP
• Manufacturer: Toshiba

Specifications of TC58DVG02A1FT

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 1G (128M x 8)
• Speed: 50ns
• Interface: Serial
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Multi Block Erase
address have been input.
“71H”.
I/O1
I/O2
I/O3
I/O4
I/O5
I/O6
I/O7
I/O8
The device carries out a Multi Block Erase operation when it receives a “D0H” command after some sets of the
After the “D0H” command, the total results of Erase operation is shown through the Status Read command
The Status discription of 71H command is following.
RY
/
BY
District 0 Pass/Fail
District 1 Pass/Fail
District 2 Pass/Fail
District 3 Pass/Fail
Total Pass/Fail
Write Protect
Ready/Busy
Not Used
STATUS
D0
Pass: 0
Pass: 0
Pass: 0
Pass: 0
Pass: 0
Do not care
Ready: 1
Protect: 0
Status Read
command
71
OUTPUT
Fail: 1
Fail: 1
Fail: 1
Fail: 1
Fail: 1
Busy: 0
Not Protect: 1
I/O
Fail
Pass
If at least one fail occurred in Max 4 Blocks
erase operation, it shows “Fail” condition.
If fail occurred in District 0 area, it shows
“Fail” condition.
as I/O2.
I/O1 describes total Pass/Fail condition.
I/O2 describes Pass/Fail condition.
I/O3, I/O4 and I/O5 are as same manner
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