TC4424AVOA Microchip Technology, TC4424AVOA Datasheet - Page 3

• Manufacturer Part Number: TC4424AVOA
• Description: IC MOSFET DVR 3A DUAL HS 8SOIC
• Manufacturer: Microchip Technology
• Type: Low Sider

Specifications of TC4424AVOA

• Number Of Outputs: 2
• Configuration: Low-Side
• Input Type: Non-Inverting
• Delay Time: 40ns
• Current - Peak: 4.5A
• Number Of Configurations: 2
• Voltage - Supply: 4.5 V ~ 18 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Rise Time: 21 ns
• Fall Time: 21 ns
• Supply Voltage (min): 4.5 V
• Supply Current: 2 mA
• Maximum Power Dissipation: 610 mW
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Number Of Drivers: 2
• Device Type: MOSFET
• Peak Output Current: 4.5A
• Output Resistance: 3.7ohm
• Input Delay: 50ns
• Output Delay: 50ns
• Supply Voltage Range: 4.5V To 18V
• Driver Case Style: SOIC
• No. Of Pins: 8
• Rohs Compliant: Yes
• Module Configuration: Low Side
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• High Side Voltage - Max (bootstrap): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

1.0
Absolute Maximum Ratings †
Supply Voltage ................................................................+20V
Input Voltage, IN A or IN B .......... (V
Package Power Dissipation (T
DC CHARACTERISTICS (NOTE 2)
© 2007 Microchip Technology Inc.
Electrical Specifications: Unless otherwise indicated, T
Input
Logic ‘1’, High Input Voltage
Logic ‘0’, Low Input Voltage
Input Current
Input Voltage
Output
High Output Voltage
Low Output Voltage
Output Resistance, High
Output Resistance, Low
Peak Output Current
Latch-Up Protection With-
stand Reverse Current
Switching Time (Note 1)
Rise Time
Fall Time
Delay Time
Delay Time
Power Supply
Supply Voltage
Power Supply Current
Note 1:
8L PDIP .......................................................................1.2W
8L SOIC.................................................................... 0.61W
16L SOIC.....................................................................1.1W
8L DFN .................................................................... Note 3
2:
3:
ELECTRICAL
CHARACTERISTICS
Parameters
Switching times ensured by design.
Tested during characterization, not production tested.
Package power dissipation is dependent on the copper pad area on the PCB.
A
=50°C)
DD
+ 0.3V) to (GND – 5V)
Sym
V
R
I
V
V
R
V
V
V
I
REV
t
t
I
PK
t
t
D1
D2
I
I
IN
OH
OH
DD
OL
OL
R
F
S
S
IH
IN
IL
V
TC4423A/TC4424A/TC4425A
DD
Min
2.4
4.5
– 0.025
–1
—
—
—
—
—
—
—
—
—
—
—
—
-5
A
>1.5
0.15
Typ
1.5
1.3
2.2
2.8
4.5
1.0
= +25°C, with 4.5V ≤ V
12
12
40
41
—
—
—
—
—
† Notice: Stresses above those listed under "Maximum
Ratings" may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational sections of this specification is not intended.
Exposure to maximum rating conditions for extended periods
may affect device reliability.
V
DD
0.025
Max
0.25
0.8
3.0
3.5
2.0
21
21
48
48
18
—
—
—
—
1
+0.3
Units
mA
mA
µA
ns
ns
ns
ns
V
V
V
V
V
Ω
Ω
A
A
V
DD
DC Test
0V ≤ V
DC Test
I
I
10V≤ V
Duty cycle ≤ 2%, t ≤ 300 µsec.
Figure 4-1, Figure 4-2,
C
Figure 4-1, Figure 4-2,
C
Figure 4-1, Figure 4-2,
C
Figure 4-1, Figure 4-2,
C
V
V
OUT
OUT
≤ 18V.
IN
IN
L
L
L
L
= 1800 pF
= 1800 pF
= 1800 pF
= 1800 pF
= 3V (Both inputs)
= 0V (Both inputs)
= 10 mA, V
= 10 mA, V
IN
DD
≤ V
Conditions
≤18V (Note 2)
DD
DD
DD
DS21998B-page 3
= 18V
= 18V