MCP1401T-E/OT Microchip Technology, MCP1401T-E/OT Datasheet - Page 10

• Manufacturer Part Number: MCP1401T-E/OT
• Description: IC MOSFET DRVR INV 500MA SOT23-5
• Manufacturer: Microchip Technology
• Type: Low Sider

Specifications of MCP1401T-E/OT

• Number Of Outputs: 1
• Configuration: Low-Side
• Input Type: Inverting
• Delay Time: 35ns
• Current - Peak: 500mA
• Number Of Configurations: 1
• Voltage - Supply: 4.5 V ~ 18 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: SOT-23-5, SC-74A, SOT-25
• Rise Time: 25 ns
• Fall Time: 20 ns
• Supply Voltage (min): 4.5 V
• Supply Current: 1.1 mA
• Maximum Power Dissipation: 390 mW
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Number Of Drivers: 1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• High Side Voltage - Max (bootstrap): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MCP1401T-E/OT; MCP1401T-E/OTTR

MCP1401/02
4.0
4.1
MOSFET drivers are high-speed, high current devices
which are intended to source/sink high peak currents to
charge/discharge the gate capacitance of external
MOSFETs or IGBTs. In high frequency switching power
supplies, the PWM controller may not have the drive
capability to directly drive the power MOSFET. A
MOSFET driver like the MCP1401/02 family can be
used
capability.
4.2
The ability of a MOSFET driver to transition from a fully
off state to a fully on state are characterized by the
drivers rise time (t
delays (t
can typically charge and discharge a 470 pF load
capacitance in 19 ns along with a typical matched
propagation delay of 35 ns.
show the test circuit and timing waveform used to verify
the MCP1401/02 timing.
FIGURE 4-1:
Waveform.
DS22052B-page 10
Output
Input
+5V
18V
0V
0V
to
Input
D1
APPLICATION INFORMATION
General Information
MOSFET Driver Timing
10%
and t
provide
90%
D2
). The MCP1401/02 family of drivers
t
MCP1401
R
V
D1
10%
), fall time (t
DD
additional
Inverting Driver Timing
= 18V
t
F
Figure 4-1
1 µF
source/sink
F
), and propagation
C
L
t
D2
0.1 µF
Ceramic
Output
= 470 pF
90%
and
t
10%
R
Figure 4-2
current
90%
FIGURE 4-2:
Waveform.
4.3
Careful layout and decoupling capacitors are highly
recommended when using MOSFET drivers. Large
currents are required to charge and discharge
capacitive loads quickly. For example, approximately
550 mA are needed to charge a 470 pF load with 18V
in 15 ns.
To operate the MOSFET driver over a wide frequency
range with low supply impedance, a ceramic and low
ESR film capacitor is recommended to be placed in
parallel between the driver V
ESR film capacitor and a 0.1 µF ceramic capacitor
placed between pins 2 and 1 should be used. These
capacitors should be placed close to the driver to
minimized circuit board parasitics and provide a local
source for the required current.
4.4
Proper PCB layout is important in a high current, fast
switching circuit to provide proper device operation and
robustness of design. PCB trace loop area and
inductance should be minimized by the use of ground
planes or trace under MOSFET gate drive signals,
separate analog and power grounds, and local driver
decoupling.
Placing a ground plane beneath the MCP1401/02 will
help as a radiated noise shield as well as providing
some heat sinking for power dissipated within the
device.
Output
Input
+5V
18V
0V
0V
Input
Decoupling Capacitors
PCB Layout Considerations
10%
t
D1
MCP1402
V
DD
90%
Non-Inverting Driver Timing
© 2007 Microchip Technology Inc.
= 18V
10%
1 µF
DD
t
R
and GND. A 1.0 µF low
C
L
0.1 µF
Ceramic
t
Output
90%
= 470 pF
D2
10%
90%
t
F