MCP1401T-E/OT Microchip Technology, MCP1401T-E/OT Datasheet - Page 4

IC MOSFET DRVR INV 500MA SOT23-5

MCP1401T-E/OT

Manufacturer Part Number
MCP1401T-E/OT
Description
IC MOSFET DRVR INV 500MA SOT23-5
Manufacturer
Microchip Technology
Type
Low Sider
Datasheet

Specifications of MCP1401T-E/OT

Number Of Outputs
1
Configuration
Low-Side
Input Type
Inverting
Delay Time
35ns
Current - Peak
500mA
Number Of Configurations
1
Voltage - Supply
4.5 V ~ 18 V
Operating Temperature
-40°C ~ 125°C
Mounting Type
Surface Mount
Package / Case
SOT-23-5, SC-74A, SOT-25
Rise Time
25 ns
Fall Time
20 ns
Supply Voltage (min)
4.5 V
Supply Current
1.1 mA
Maximum Power Dissipation
390 mW
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
Number Of Drivers
1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
High Side Voltage - Max (bootstrap)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MCP1401T-E/OT
MCP1401T-E/OTTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MCP1401T-E/OT
Manufacturer:
Microchip Technology
Quantity:
40 936
Part Number:
MCP1401T-E/OT
Manufacturer:
MOLEX
Quantity:
5 200
MCP1401/02
DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE)
TEMPERATURE CHARACTERISTICS
DS22052B-page 4
Electrical Specifications: Unless otherwise indicated, operating temperature range with 4.5V ≤ V
Input
Logic ‘1’, High Input Voltage
Logic ‘0’, Low Input Voltage
Input Current
Input Voltage
Output
High Output Voltage
Low Output Voltage
Output Resistance, High
Output Resistance, Low
Switching Time (Note 1)
Rise Time
Fall Time
Delay Time
Delay Time
Power Supply
Supply Voltage
Power Supply Current
Note 1: Switching times ensured by design.
Electrical Specifications: Unless otherwise noted, all parameters apply with 4.5V ≤ V
Temperature Ranges
Specified Temperature Range
Maximum Junction Temperature
Storage Temperature Range
Package Thermal Resistances
Thermal Resistance, 5L-SOT-23
2:
Parameters
Tested during characterization, not production tested.
Parameters
Sym
V
R
V
R
V
V
V
V
t
t
I
t
t
I
D1
D2
IN
OH
OL
OH
DD
OL
R
F
S
IH
IN
IL
V
Sym
DD
θ
T
T
T
JA
A
A
J
Min
–10
2.4
4.5
– 0.025
-5
Min
–40
–65
0.90
0.11
Typ
12
10
20
18
40
40
Typ
256
V
DD
0.025
Max
18.0
1.10
0.20
+10
0.8
18
16
30
28
51
51
+0.3
+125
+150
+150
Max
Units
mA
mA
µA
ns
ns
ns
ns
V
V
Ω
Ω
V
V
V
V
Units
°C/W
°C
°C
°C
0V ≤ V
DC TEST
DC TEST
I
I
Figure
C
Figure
C
Figure
Figure
V
V
OUT
OUT
IN
IN
L
L
= 470 pF
= 470 pF
= 3V
= 0V
= 10 mA, V
= 10 mA, V
IN
© 2007 Microchip Technology Inc.
DD
4-1,
4-1,
4-1,
4-1,
≤ V
≤ 18V.
Figure 4-2
Figure 4-2
Figure 4-2
Figure 4-2
DD
Conditions
Conditions
DD
DD
DD
= 18V
= 18V
≤ 18V.

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