LT1336IN Linear Technology, LT1336IN Datasheet

IC MOSFET DRVR 1/2BRDG NCH 16DIP

LT1336IN

Manufacturer Part Number
LT1336IN
Description
IC MOSFET DRVR 1/2BRDG NCH 16DIP
Manufacturer
Linear Technology
Datasheet

Specifications of LT1336IN

Configuration
Half Bridge
Input Type
Differential
Delay Time
250ns
Current - Peak
1.5A
Number Of Configurations
1
Number Of Outputs
2
High Side Voltage - Max (bootstrap)
60V
Voltage - Supply
10 V ~ 15 V
Operating Temperature
-40°C ~ 85°C
Mounting Type
Through Hole
Package / Case
16-DIP (0.300", 7.62mm)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
LT1336IN#PBF
Manufacturer:
LINEAR/凌特
Quantity:
20 000
FeaTures
applicaTions
Typical applicaTion
n
n
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n
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Floating Top Driver Switches Up to 60V
Internal Boost Regulator for DC Operation
180ns Transition Times Driving 10,000pF
Adaptive Nonoverlapping Gate Drives Prevent
Shoot-Through
Drives Gate of Top N-Channel MOSFET
Above Supply
Top Drive Maintained at High Duty Cycles
TTL/CMOS Input Levels
Undervoltage Lockout with Hysteresis
Operates at Supply Voltages from 10V to 15V
Separate Top and Bottom Drive Pins
PWM of High Current Inductive Loads
Half-Bridge and Full-Bridge Motor Control
Synchronous Step-Down Switching Regulators
3-Phase Brushless Motor Drive
High Current Transducer Drivers
Class D Power Amplifiers
+
12V
0Hz TO 100kHz
10µF
25V
PWM
R
2
1/4W
SENSE
10
2
5
3
4
SGND
SV
PV
UVOUT
INTOP
INBOTTOM
1N4148
I
SENSE
+
+
6
1
LT1336
SWGND
15
200µH*
TSOURCE
BGATEDR
TGATEDR
BGATEFB
TGATEFB
SWITCH
BOOST
PGND
7
16
14
13
12
11
9
8
+
1N4148
C
1µF
BOOST
HV = 40V MAX**
IRFZ44
IRFZ44
DescripTion
The LT
power MOSFET driver. The floating driver can drive the
topside N-channel power MOSFETs operating off a high
voltage (HV) rail of up to 60V (absolute maximum). In
PWM operation an on-chip switching regulator maintains
charge in the bootstrap capacitor even when approaching
and operating at 100% duty cycle.
The internal logic prevents the inputs from turning on
the power MOSFETs in a half-bridge at the same time. Its
unique adaptive protection against shoot-through cur-
rents eliminates all matching requirements for the two
MOSFETs. This greatly eases the design of high efficiency
motor control and switching regulator systems.
During low supply or start-up conditions, the undervoltage
lockout actively pulls the driver outputs low to prevent
the power MOSFETs from being partially turned on. The
0.5V hysteresis allows reliable operation even with slowly
varying supplies.
L, LT, LTC, LTM, Linear Technology and the Linear logo are registered trademarks of Linear
Technology Corporation. All other trademarks are the property of their respective owners.
+
®
1000µF
100V
1336 is a cost effective half-bridge N-channel
Half-Bridge N-Channel
Power MOSFET Driver
with Boost Regulator
** FOR HV > 40V SEE “DERIVING THE FLOATING
* SUMIDA RCR-664D-221KC
INTOP INBOTTOM
SUPPLY WITH THE FLYBACK TOPOLOGY” IN
APPLICATIONS INFORMATION SECTION
H
H
L
L
H
H
L
L
TGATEDR
H
L
L
L
LT1336
BGATEDR
L
H
L
L
1336 TA01
1336fa
1

Related parts for LT1336IN

LT1336IN Summary of contents

Page 1

... MOSFETs from being partially turned on. The 0.5V hysteresis allows reliable operation even with slowly varying supplies. L, LT, LTC, LTM, Linear Technology and the Linear logo are registered trademarks of Linear Technology Corporation. All other trademarks are the property of their respective owners. 16 ...

Page 2

... Lead Temperature (Soldering, 10 sec) ................... 300°C 16 SWITCH 15 SWGND 14 BOOST 13 TGATEDR 12 TGATEFB 11 TSOURCE + BGATEDR PART MARKING PACKAGE DESCRIPTION LT1336CN 16-Lead Plastic DIP LT1336IN 16-Lead Plastic DIP LT1336CS 16-Lead Plastic SO LT1336IS 16-Lead Plastic SO http://www.linear.com/leadfree/ http://www.linear.com/tapeandreel/ TOP VIEW SWITCH SENSE + SWGND INTOP 3 14 ...

Page 3

T Feedback pins connected to Gate Drive pins unless otherwise specified. SYMBOL PARAMETER I DC Supply Current (Note Boost Current (Note 3) BOOST V Input Logic Low IL V ...

Page 4

... Note 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime. Note calculated from the ambient temperature T J dissipation P according to the following formulas: D LT1336CN/LT1336IN )(70°C/ LT1336CS/LT1336IS )(110° ...

Page 5

Typical perForMance characTerisTics DC + Dynamic Supply Current vs Input Frequency 60 50% DUTY CYCLE C = 3000pF GATE 20V 15V + V = 10V 100 ...

Page 6

LT1336 Typical perForMance characTerisTics Top Gate Rise Time vs Temperature 300 + V = 12V 280 C = 10000pF LOAD 260 240 220 200 180 160 C = 3000pF LOAD 140 120 C = 1000pF LOAD 100 80 –50 –25 ...

Page 7

FuncTions I (Pin 1): Boost Regulator I SENSE SENSE An R placed between Pin 1 and V SENSE peak current. Pin 1 can be left open if the boost regulator is not used (Pin 2): Main Signal ...

Page 8

LT1336 FuncTional DiagraM + SENSE – 6V 480mV + 2 BIAS INTOP 5V 3k INBOTTOM 4 5V UVOUT 5 SGND 6 7 PGND BGATEFB 8 8 TRIP = 10.6V TOP UV TRIP = ...

Page 9

TesT circuiT V/I 1µ SUMIDA RCR-664D-221KC TiMing DiagraM 2V INTOP 0.8V 2V INBOTTOM 0.8V 12V TOP GATE DRIVER 12V 10V BOTTOM GATE 2V DRIVER 1N4148 200µH* ...

Page 10

LT1336 operaTion (Refer to Functional Diagram) The LT1336 incorporates two independent driver chan- nels with separate inputs and outputs. The inputs are TTL/CMOS compatible; they can withstand input voltages + as high The 1.4V input threshold is ...

Page 11

In applications where switching is always above 10kHz and the duty cycle never exceeds 90%, Pins 1, 15 and 16 can be left open. The bootstrap capacitor is then charged by conventional bootstrapping. Only a diode needs to ...

Page 12

LT1336 applicaTions inForMaTion Using the components as shown in Figure 2 the flyback regulator will run at around 800kHz. To lower the frequency C can be increased and to increase the frequency FILTER C can be decreased. FILTER D1 1N4148 ...

Page 13

Paralleling MOSFETs When the above calculations result in a lower R than is economically feasible with a single MOSFET, two or more MOSFETs can be paralleled. The MOSFETs will inherently share the currents according to their R ratio ...

Page 14

LT1336 applicaTions inForMaTion  V  ( OUT Switch On= Total Period     HV  HV–V  ( OUT Switch Off= Total Period     HV Note that for HV > the switch ...

Page 15

This can be avoided by placing a discharge resistor between HV supply and ground to divert the return current to ground as shown in Figure 5. For a ...

Page 16

LT1336 Typical applicaTions 100µF 10k + IN 0.0033µ 0.1µ LT1015 100k 1µF 3 0.1µ 0.0033µ 47µ 47µF 4 95k LT1058 10k ...

Page 17

DescripTion .300 – .325 (7.620 – 8.255) .008 – .015 (0.203 – 0.381) +.035 .325 –.015 ( ) +0.889 8.255 –0.381 NOTE: INCHES 1. DIMENSIONS ARE MILLIMETERS *THESE DIMENSIONS DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS. MOLD FLASH OR ...

Page 18

LT1336 package DescripTion .050 BSC N .245 MIN .030 ±.005 TYP RECOMMENDED SOLDER PAD LAYOUT .010 – .020 × 45° (0.254 – 0.508) .008 – .010 (0.203 – 0.254) .016 – .050 (0.406 – 1.270) NOTE: INCHES ...

Page 19

... Updated Notes in Electrical Characteristics section. Updated Related Parts. Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representa- tion that the interconnection of its circuits as described herein will not infringe on existing patent rights. LT1336 ...

Page 20

... Separate Input Channels, 100V Maximum Input Voltage, MSOP-8 www.linear.com ● 12V 2200µF EA LOW ESR 40V IRFZ34 0.1µF 12 330k 47µH 0.007 IRFZ44 IRFZ44 9 MBR340 LT 1010 REV A • PRINTED IN USA  LINEAR TECHNOLOGY CORPORA TION 1996 5V 5400µF LOW ESR 1136 F08 1336fa ...

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