IR11662SPBF International Rectifier, IR11662SPBF Datasheet - Page 7

• Manufacturer Part Number: IR11662SPBF
• Description: IC CNTROL SMART RECTIFIER 8-SOIC
• Manufacturer: International Rectifier
• Series: Advanced Smart Rectifier™r

Specifications of IR11662SPBF

• Configuration: High-Side
• Input Type: Non-Inverting
• Delay Time: 60ns
• Current - Peak: 1A
• Number Of Configurations: 1
• Number Of Outputs: 1
• Voltage - Supply: 11.4 V ~ 18 V
• Operating Temperature: -25°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: *
• Device Type: MOSFET
• Module Configuration: Half Bridge
• Peak Output Current: 4A
• Input Delay: 60ns
• Output Delay: 50ns
• Supply Voltage Range: 11.4V To 18V
• Driver Case Style: SOIC
• No. Of Pins: 8
• Rohs Compliant: Yes
• Part Status: Active and Preferred
• Package: 8-Pin SOIC(NB)
• Circuit: Switching Regulator Controller
• Topology: Flyback / Resonant Half-Bridge
• Current Mode: Discontinuous / Critical
• Vcc (min): 11.4
• Vcc (max): 18
• Vout (max): 200
• Iout (a): +1 / -4
• Switch Freq (khz): up to 500kHz
• Vgate Clamp (v): 10.7
• Programmability: MOT / OVT
• Enable Pin: Yes
• Isleep (ua): 200
• Automatic Mot Protection: Yes
• Pbf: PbF Option Available
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• High Side Voltage - Max (bootstrap): -

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Electrical Characteristics
VCC=15V and T
are referenced to GND (pin7).
Gate Driver Section
Gate Low Voltage
Gate High Voltage
Rise Time
Fall Time
Turn on Propagation Delay
Turn off Propagation Delay
Pull up Resistance
Pull down Resistance
Output Peak Current(source) I
Output Peak Current (sink)
Parameters
A
= 25°C unless otherwise specified. The output voltage and current (V
Symbol
O source
I
V
V
r
O sink
t
t
down
r
t
t
Don
Doff
t
t
GLO
GTH
up
r1
r2
f1
f2
Min.
9.0
Typ.
10.7
181
0.3
1.2
21
10
44
60
50
5
1
4
7
Max.
12.5
0.5
95
75
Units
ns
ns
ns
ns
ns
ns
V
V
A
A
I
V
C
C
C
C
V
V
I
I
C
C
GATE
GATE
GATE
CC
DS
DS
LOAD
LOAD
LOAD
LOAD
LOAD
LOAD
=12V-18V (internally clamped)
to V
to V
= 200mA
= 1A – GBD
= -200mA
= 1nF, V
= 10nF, V
= 1nF, V
= 10nF, V
= 10nF – GBD
= 10nF – GBD
GATE
GATE
© 2010 International Rectifier
Remarks
-100mV overdrive
-100mV overdrive
O
CC
CC
and I
CC
CC
=12V
=12V
IR11662S
=12V
=12V
O
) parameters